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Sang-Hyun Oh

  • 421 Washington Ave SE, 435 Amundson Hall

    55455 Minneapolis

    United States


Research activity per year

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Conference article

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  • 2001

    50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

    Hergenrother, J. M., Wilk, G. D., Nigam, T., Klemens, F. P., Monroe, D., Silverman, P. J., Sorsch, T. W., Busch, B., Green, M. L., Baker, M. R., Boone, T., Bude, M. K., Ciampa, N. A., Ferry, E. J., Fiory, A. T., Hillenius, S. J., Jacobson, D. C., Johnson, R. W., Kalavade, P., Keller, R. C. & 20 others, King, C. A., Kornblit, A., Krautter, H. W., Lee, J. T. C., Mansfield, W. M., Miner, J. F., Morris, M. D., Oh, S. H., Rosamilia, J. M., Sapjeta, B. J., Short, K., Steiner, K., Muller, D. A., Voyles, P. M., Grazul, J. L., Shero, E. J., Givens, M. E., Pomarede, C., Mazanec, M. & Werkhoven, C., Dec 1 2001, In: Technical Digest - International Electron Devices Meeting. p. 51-54 4 p.

    Research output: Contribution to journalConference articlepeer-review

    41 Scopus citations
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