Engineering & Materials Science
Chemical vapor deposition
100%
Silicon
85%
Oxides
56%
Solar cells
56%
Metals
54%
Thin films
53%
Permittivity
53%
Nanocrystals
52%
Nanoparticles
47%
Gallium
46%
Plasmas
43%
Nitrates
43%
Temperature
41%
Indium
40%
Atomic layer deposition
38%
Low pressure chemical vapor deposition
37%
Hafnium
36%
Interface states
35%
Single crystals
34%
Copper
32%
Substrates
32%
Energy gap
32%
Hafnium oxides
30%
Zirconium
29%
Silanes
28%
Tin dioxide
26%
Particle beams
25%
Rutherford backscattering spectroscopy
25%
Titanium
24%
Chemical analysis
23%
Rapid thermal processing
22%
Transistors
22%
Oxide films
21%
Charge trapping
20%
Annealing
20%
Amorphous silicon
20%
Hot Temperature
20%
Nitrides
19%
Oxygen
19%
Mass spectrometers
18%
Carbon nanotubes
17%
Titanium dioxide
17%
Crystals
16%
Fabrication
16%
Magnetization
16%
Inversion layers
16%
Tin
15%
Zinc oxide
15%
Single-walled carbon nanotubes (SWCN)
15%
Chemical Compounds
Liquid Film
77%
Chemical Vapour Deposition
50%
Solar Cell
32%
Low Pressure Chemical Vapour Deposition
32%
Nitrate
28%
Nanocrystal
28%
Hafnium Atom
27%
Metal Oxide
27%
Interface State
27%
Atomic Layer Epitaxy
25%
Plasma
24%
Diselenide
23%
Oxide
22%
Tin Dioxide
22%
Band Gap
22%
Permittivity
19%
Silicon Nanoparticle
19%
Silane
18%
Capacitor
18%
Particle Beam
18%
Nonconductor
17%
Dielectric Constant
17%
Annealing
16%
Rutherford Backscattering Spectroscopy
16%
Dielectric Material
16%
Tandem Solar Cell
15%
Semiconductor
14%
Nitride
14%
Etching
14%
Amorphous Material
13%
Metal
12%
Single Walled Nanotube
12%
Application
12%
Field Effect
11%
Surface
11%
Voltage
11%
Pressure
11%
Compound Mobility
10%
Rapid Thermal Annealing
10%
Single Crystalline Solid
9%
Phosphorus(.)
9%
Selenide
9%
Tunneling
9%
Chemistry
9%
Titanium Dioxide
9%
Dioxygen
9%
Magnetization
9%
Amorphous Silicon
8%
Particle Size Distribution
8%
Polycrystalline Film
8%
Physics & Astronomy
silicon
38%
vapor deposition
31%
nanocrystals
23%
low pressure
20%
oxides
20%
permittivity
19%
nanoparticles
17%
wafers
17%
carbon nanotubes
16%
hafnium
16%
synthesis
15%
atomic layer epitaxy
15%
metal oxide semiconductors
15%
dioxides
14%
tin
14%
thin films
13%
amorphous silicon
12%
insulators
12%
gallium
12%
solar cells
11%
characterization
11%
oxidation
11%
chambers
11%
silanes
11%
temperature
10%
silicon dioxide
10%
indium
10%
metal oxides
10%
single crystals
10%
etching
10%
copper
10%
reactors
9%
hafnium oxides
9%
electric potential
9%
trapping
9%
ozone
9%
traps
9%
field effect transistors
9%
electrons
8%
degradation
8%
titanium
8%
oxide films
8%
magnetization
8%
leakage
8%
oxygen
8%
absorbers
8%
Fermi surfaces
8%
electronics
7%
metals
7%
nitrogen
7%
