@inproceedings{6f6e2be88a9a491694ead3e427ae4b1f,
title = "0.7 micron gate length complementary Al0.75Ga0.25As/In0.25Ga0.75As/GaAs HIGFET technology for high speed/low power digital circuits",
abstract = "Results are presented from the first submicron gate length complementary heterostructure insulated gate field effect transistor (C-HIGFET) devices and circuits (n- and p-HIGFET gate lengths of 0.7 mu m). This reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switching-power/frequency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated.",
author = "Grider, {D. E.} and Ruden, {P. P.} and Nohava, {J. C.} and Mactaggart, {I. R.} and Stronczer, {J. J.} and Tran, {R. H.}",
year = "1992",
month = jan,
day = "1",
doi = "10.1109/IEDM.1992.307372",
language = "English (US)",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "331--334",
booktitle = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992",
note = "1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 ; Conference date: 13-12-1992 Through 16-12-1992",
}