0.7 micron gate length complementary Al0.75Ga0.25As/In0.25Ga0.75As/GaAs HIGFET technology for high speed/low power digital circuits

D. E. Grider; P. P. Ruden; J. C. Nohava; I. R. Mactaggart; J. J. Stronczer; R. H. Tran

doi:10.1109/IEDM.1992.307372

0.7 micron gate length complementary Al_0.75Ga_0.25As/In_0.25Ga_0.75As/GaAs HIGFET technology for high speed/low power digital circuits

D. E. Grider, P. P. Ruden, J. C. Nohava, I. R. Mactaggart, J. J. Stronczer, R. H. Tran

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Scopus citations

Abstract

Results are presented from the first submicron gate length complementary heterostructure insulated gate field effect transistor (C-HIGFET) devices and circuits (n- and p-HIGFET gate lengths of 0.7 mu m). This reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switching-power/frequency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated.

Original language	English (US)
Title of host publication	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	331-334
Number of pages	4
ISBN (Electronic)	0780308174
DOIs	https://doi.org/10.1109/IEDM.1992.307372
State	Published - Jan 1 1992
Event	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States Duration: Dec 13 1992 → Dec 16 1992

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	1992-December
ISSN (Print)	0163-1918

Conference

Conference	1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
Country	United States
City	San Francisco
Period	12/13/92 → 12/16/92

Access

10.1109/IEDM.1992.307372

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Grider, D. E., Ruden, P. P., Nohava, J. C., Mactaggart, I. R., Stronczer, J. J., & Tran, R. H. (1992). 0.7 micron gate length complementary Al_0.75Ga_0.25As/In_0.25Ga_0.75As/GaAs HIGFET technology for high speed/low power digital circuits. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 331-334). [307372] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307372

0.7 micron gate length complementary Al_0.75Ga_0.25As/In_0.25Ga_0.75As/GaAs HIGFET technology for high speed/low power digital circuits. / Grider, D. E.; Ruden, P. P.; Nohava, J. C.; Mactaggart, I. R.; Stronczer, J. J.; Tran, R. H.

1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. p. 331-334 307372 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 1992-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grider, DE, Ruden, PP, Nohava, JC, Mactaggart, IR, Stronczer, JJ & Tran, RH 1992, 0.7 micron gate length complementary Al_0.75Ga_0.25As/In_0.25Ga_0.75As/GaAs HIGFET technology for high speed/low power digital circuits. in 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992., 307372, Technical Digest - International Electron Devices Meeting, IEDM, vol. 1992-December, Institute of Electrical and Electronics Engineers Inc., pp. 331-334, 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992, San Francisco, United States, 12/13/92. https://doi.org/10.1109/IEDM.1992.307372

Grider DE, Ruden PP, Nohava JC, Mactaggart IR, Stronczer JJ, Tran RH. 0.7 micron gate length complementary Al_0.75Ga_0.25As/In_0.25Ga_0.75As/GaAs HIGFET technology for high speed/low power digital circuits. In 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc. 1992. p. 331-334. 307372. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.1992.307372

Grider, D. E. ; Ruden, P. P. ; Nohava, J. C. ; Mactaggart, I. R. ; Stronczer, J. J. ; Tran, R. H. / 0.7 micron gate length complementary Al_0.75Ga_0.25As/In_0.25Ga_0.75As/GaAs HIGFET technology for high speed/low power digital circuits. 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992. Institute of Electrical and Electronics Engineers Inc., 1992. pp. 331-334 (Technical Digest - International Electron Devices Meeting, IEDM).

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abstract = "Results are presented from the first submicron gate length complementary heterostructure insulated gate field effect transistor (C-HIGFET) devices and circuits (n- and p-HIGFET gate lengths of 0.7 mu m). This reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switching-power/frequency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated.",

author = "Grider, {D. E.} and Ruden, {P. P.} and Nohava, {J. C.} and Mactaggart, {I. R.} and Stronczer, {J. J.} and Tran, {R. H.}",

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AU - Ruden, P. P.

AU - Nohava, J. C.

AU - Mactaggart, I. R.

AU - Stronczer, J. J.

AU - Tran, R. H.

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AB - Results are presented from the first submicron gate length complementary heterostructure insulated gate field effect transistor (C-HIGFET) devices and circuits (n- and p-HIGFET gate lengths of 0.7 mu m). This reduction in gate length results in a factor of two increase in the switching speed of C-HIGFET gates, and a 35% reduction in switching-power/frequency without any corresponding increase in the standby power consumption. Fully functional 4Kbit SRAMs have been fabricated using this submicron C-HIGFET technology, and operation of 4Kbit SRAMs at clock frequencies of up to 360 MHz have been demonstrated.

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