0.7 micron gate length complementary Al0.75Ga0.25As/In0.25Ga0.75As/GaAs HIGFET technology for high speed/low power digital circuits

D. E. Grider, P. P. Ruden, J. C. Nohava, I. R. Mactaggart, J. J. Stronczer, R. H. Tran

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Scopus citations

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