Abstract
Tunneling leakage limits the scaling of SiO2 to about 1.5 nm. Well behaved transistors are made with MOCVD-deposited TiO2 using the thermal decomposition of titanium tetrakis isopropoxide. However, after the required O2 anneal, these devices have a 2.5 nm amorphous interfacial layer which severely limits the capacitance. Nitrato titanium (Ti(NO3)4 or NT) are synthesized as a hydrogen and carbon free decomposition. To obtain low leakage, approximately 1.0 nm GOE stacks, NT is used to deposit progressively thinner TiO2 layers on silicon that is thermally nitrided at 850 °C in NH3 at 10 torr.
Original language | English (US) |
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Title of host publication | Technical Digest - International Electron Devices Meeting |
Editors | Anon |
Publisher | IEEE |
Pages | 1038-1039 |
Number of pages | 2 |
State | Published - 1998 |
Event | Proceedings of the 1998 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: Dec 6 1998 → Dec 9 1998 |
Other
Other | Proceedings of the 1998 IEEE International Electron Devices Meeting |
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City | San Francisco, CA, USA |
Period | 12/6/98 → 12/9/98 |