1.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells

Yumin Zhang; P. Paul Ruden

doi:10.1109/3.792583

1.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells

Yumin Zhang, P. Paul Ruden

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

We show that polarization-insensitive optical gain over a wide bandwidth can be realized in a coupled pseudomorphic multiple-quantum-well structure. The barrier width is chosen such that heavy-hole subbands are grouped tightly and light-hole subbands are widely separated in energy. For specific strain conditions, the uppermost valence subbands, which have large occupation probability and strongly contribute to the gain, consist of a single light-hole subband and a group of coupled heavy-hole subbands. This arrangement gives rise to balanced gains for the TE and TM polarizations. We present calculated results for 1.3-μm semiconductor optical amplifier structures based on bands calculated in the framework of an eight-band k·p model. Two different material systems are examined, InAlGaAs and GaInAsP, on InP substrates.

Original language	English (US)
Pages (from-to)	1509-1514
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	35
Issue number	10
DOIs	https://doi.org/10.1109/3.792583
State	Published - Oct 1999

Bibliographical note

Funding Information:
Manuscript received November 13, 1998; revised May 18, 1999. This work was supported in part by DARPA/AFOSR under Contract F49620-96-1-011. The authors are with the Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN 55455 USA. Publisher Item Identifier S 0018-9197(99)07600-9.

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title = "1.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells",

abstract = "We show that polarization-insensitive optical gain over a wide bandwidth can be realized in a coupled pseudomorphic multiple-quantum-well structure. The barrier width is chosen such that heavy-hole subbands are grouped tightly and light-hole subbands are widely separated in energy. For specific strain conditions, the uppermost valence subbands, which have large occupation probability and strongly contribute to the gain, consist of a single light-hole subband and a group of coupled heavy-hole subbands. This arrangement gives rise to balanced gains for the TE and TM polarizations. We present calculated results for 1.3-μm semiconductor optical amplifier structures based on bands calculated in the framework of an eight-band k·p model. Two different material systems are examined, InAlGaAs and GaInAsP, on InP substrates.",

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N2 - We show that polarization-insensitive optical gain over a wide bandwidth can be realized in a coupled pseudomorphic multiple-quantum-well structure. The barrier width is chosen such that heavy-hole subbands are grouped tightly and light-hole subbands are widely separated in energy. For specific strain conditions, the uppermost valence subbands, which have large occupation probability and strongly contribute to the gain, consist of a single light-hole subband and a group of coupled heavy-hole subbands. This arrangement gives rise to balanced gains for the TE and TM polarizations. We present calculated results for 1.3-μm semiconductor optical amplifier structures based on bands calculated in the framework of an eight-band k·p model. Two different material systems are examined, InAlGaAs and GaInAsP, on InP substrates.

AB - We show that polarization-insensitive optical gain over a wide bandwidth can be realized in a coupled pseudomorphic multiple-quantum-well structure. The barrier width is chosen such that heavy-hole subbands are grouped tightly and light-hole subbands are widely separated in energy. For specific strain conditions, the uppermost valence subbands, which have large occupation probability and strongly contribute to the gain, consist of a single light-hole subband and a group of coupled heavy-hole subbands. This arrangement gives rise to balanced gains for the TE and TM polarizations. We present calculated results for 1.3-μm semiconductor optical amplifier structures based on bands calculated in the framework of an eight-band k·p model. Two different material systems are examined, InAlGaAs and GaInAsP, on InP substrates.

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1.3-μm polarization-insensitive optical amplifier structure based on coupled quantum wells

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