13.56 MHz 1.3 kW resonant converter with GaN FET for wireless power transfer

Jungwon Choi, Daisuke Tsukiyama, Yoshinori Tsuruda, Juan Rivas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

50 Scopus citations

Abstract

This paper presents a 1.3 kW resonant power amplifier using a Gallium Nitride (GaN) device at 13.56 MHz for wireless power transfer (WPT). The power amplifier driving the power transmitting coils is based on a Class Φ2 inverter, a single switch topology with low switch voltage stress and fast transient response. This implementation utilizes a recently available GaN device in a low inductance package that is compatible with operation in the 10's of MHz switching frequency. These power GaN switching devices have low gate resistance RG and low capacitance CGS which greatly reduces the power requirements of the gate drive circuitry. This paper shows experimental measurements of the inverter in a WPT application and characterization of the system performance over various distances and operating conditions.

Original languageEnglish (US)
Title of host publication2015 IEEE Wireless Power Transfer Conference, WPTC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781467374477
DOIs
StatePublished - Jun 29 2015
Externally publishedYes
Event2015 IEEE Wireless Power Transfer Conference, WPTC 2015 - Boulder, United States
Duration: May 13 2015May 15 2015

Publication series

Name2015 IEEE Wireless Power Transfer Conference, WPTC 2015

Conference

Conference2015 IEEE Wireless Power Transfer Conference, WPTC 2015
Country/TerritoryUnited States
CityBoulder
Period5/13/155/15/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

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