1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

Siyuranga O. Koswatta; Steven J. Koester; Wilfried Haensch

doi:10.1109/IEDM.2009.5424279

1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

Siyuranga O. Koswatta, Steven J. Koester, Wilfried Haensch

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

33 Scopus citations

Abstract

We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on onedimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ∼20mV/dec along with ∼100x increase in above-threshold current compared to the homojunction geometry.

Original language	English (US)
Title of host publication	2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
DOIs	https://doi.org/10.1109/IEDM.2009.5424279
State	Published - Dec 1 2009
Event	2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States Duration: Dec 7 2009 → Dec 9 2009

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Other	2009 International Electron Devices Meeting, IEDM 2009
Country/Territory	United States
City	Baltimore, MD
Period	12/7/09 → 12/9/09

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title = "1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing",

abstract = "We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on onedimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ∼20mV/dec along with ∼100x increase in above-threshold current compared to the homojunction geometry.",

author = "Koswatta, {Siyuranga O.} and Koester, {Steven J.} and Wilfried Haensch",

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AU - Koswatta, Siyuranga O.

AU - Koester, Steven J.

AU - Haensch, Wilfried

PY - 2009/12/1

Y1 - 2009/12/1

N2 - We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on onedimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ∼20mV/dec along with ∼100x increase in above-threshold current compared to the homojunction geometry.

AB - We present a detailed study on the operation of a tunneling field-effect transistor (TFET) based on onedimensional broken-gap heterostructure geometry. Using numerical simulations we show that less than 60mV/dec subthreshold swing can be obtained in this device along with MOSFET-like drive-currents. We further demonstrate that the 1D geometry is uniquely suited for this device concept. Our model broken-gap TFET has a minimum swing of ∼20mV/dec along with ∼100x increase in above-threshold current compared to the homojunction geometry.

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M3 - Conference contribution

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BT - 2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest

T2 - 2009 International Electron Devices Meeting, IEDM 2009

Y2 - 7 December 2009 through 9 December 2009

ER -

1D Broken-gap tunnel transistor with MOSFET-like on-currents and sub-60mV/dec subthreshold swing

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