2D Insulator-Metal Transition in Aerosol-Jet-Printed Electrolyte-Gated Indium Oxide Thin Film Transistors

TY - JOUR

T1 - 2D Insulator-Metal Transition in Aerosol-Jet-Printed Electrolyte-Gated Indium Oxide Thin Film Transistors

AU - Xie, Wei

AU - Zhang, Xin

AU - Leighton, Chris

AU - Frisbie, C. Daniel

N1 - Funding Information: Work supported primarily by the National Science Foundation (NSF) Materials Research Science and Engineering Center (MRSEC) at the University of Minnesota through DMR-1420013, with additional support from the Multi-University Research Initiative (MURI) program sponsored by the Office of Naval Research (MURI Award N00014-11-1-0690). Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. The authors thank B. I. Shklovskii and K. Reich for enlightening discussions.

PY - 2017/3/1

Y1 - 2017/3/1

UR - http://www.scopus.com/inward/record.url?scp=85012022738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85012022738&partnerID=8YFLogxK

U2 - 10.1002/aelm.201600369

DO - 10.1002/aelm.201600369

M3 - Article

AN - SCOPUS:85012022738

SN - 2199-160X

VL - 3

JO - Advanced Electronic Materials

JF - Advanced Electronic Materials

IS - 3

M1 - 1600369

ER -