50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

J. M. Hergenrother; G. D. Wilk; T. Nigam; F. P. Klemens; D. Monroe; P. J. Silverman; T. W. Sorsch; B. Busch; M. L. Green; M. R. Baker; T. Boone; M. K. Bude; N. A. Ciampa; E. J. Ferry; A. T. Fiory; S. J. Hillenius; D. C. Jacobson; R. W. Johnson; P. Kalavade; R. C. Keller; C. A. King; A. Kornblit; H. W. Krautter; J. T.C. Lee; W. M. Mansfield; J. F. Miner; M. D. Morris; S. H. Oh; J. M. Rosamilia; B. J. Sapjeta; K. Short; K. Steiner; D. A. Muller; P. M. Voyles; J. L. Grazul; E. J. Shero; M. E. Givens; C. Pomarede; M. Mazanec; C. Werkhoven

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO₂ and Al₂O₃ gate dielectrics

J. M. Hergenrother, G. D. Wilk, T. Nigam, F. P. Klemens, D. Monroe, P. J. Silverman, T. W. Sorsch, B. Busch, M. L. Green, M. R. Baker, T. Boone, M. K. Bude, N. A. Ciampa, E. J. Ferry, A. T. Fiory, S. J. Hillenius, D. C. Jacobson, R. W. Johnson, P. Kalavade, R. C. KellerC. A. King, A. Kornblit, H. W. Krautter, J. T.C. Lee, W. M. Mansfield, J. F. Miner, M. D. Morris, S. H. Oh, J. M. Rosamilia, B. J. Sapjeta, K. Short, K. Steiner, D. A. Muller, P. M. Voyles, J. L. Grazul, E. J. Shero, M. E. Givens, C. Pomarede, M. Mazanec, C. Werkhoven

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

46 Scopus citations

Abstract

We have integrate HfO₂ and Al₂O₃ gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry (1,2). The transistors are among the first reported with ALD HfO₂ gate dielectrics, and have HfO₂ target equivalent oxide thickness (tEOTs) down to 13 Å. The poly-crystalline HfO₂ films in these VRG nMOSFETs exhibit extremely low gate leakage (GL) current densities of J_G ∼ 10^-7 A/cm² at V_G-V_T,Long = 0.6 V for 15 Å tEOT devices. This indicates that amorphous gate dielectrics may not be necessary to meet GL requirements. HfO₂ devices with 50 nm gate length L_G exhibit drive currents [normalized by the coded width W_C (1)] of 490 μA/μm for 1 V operation (overdrive V_GS-V_T = 0.6 V) with good short-channel performance. These results demonstrate that ALD is compatible with the demanding VRG geometry, thereby illustrating that it should be well-suited to essentially any novel device structure built with Si-compatible materials.

Original language	English (US)
Pages (from-to)	51-54
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 2001
Event	IEEE International Electron Devices Meeting IEDM 2001 - Washington, DC, United States Duration: Dec 2 2001 → Dec 5 2001

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Hergenrother, J. M., Wilk, G. D., Nigam, T., Klemens, F. P., Monroe, D., Silverman, P. J., Sorsch, T. W., Busch, B., Green, M. L., Baker, M. R., Boone, T., Bude, M. K., Ciampa, N. A., Ferry, E. J., Fiory, A. T., Hillenius, S. J., Jacobson, D. C., Johnson, R. W., Kalavade, P., ... Werkhoven, C. (2001). 50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO₂ and Al₂O₃ gate dielectrics. Technical Digest - International Electron Devices Meeting, 51-54.

Hergenrother, JM, Wilk, GD, Nigam, T, Klemens, FP, Monroe, D, Silverman, PJ, Sorsch, TW, Busch, B, Green, ML, Baker, MR, Boone, T, Bude, MK, Ciampa, NA, Ferry, EJ, Fiory, AT, Hillenius, SJ, Jacobson, DC, Johnson, RW, Kalavade, P, Keller, RC, King, CA, Kornblit, A, Krautter, HW, Lee, JTC, Mansfield, WM, Miner, JF, Morris, MD, Oh, SH, Rosamilia, JM, Sapjeta, BJ, Short, K, Steiner, K, Muller, DA, Voyles, PM, Grazul, JL, Shero, EJ, Givens, ME, Pomarede, C, Mazanec, M & Werkhoven, C 2001, '50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO₂ and Al₂O₃ gate dielectrics', Technical Digest - International Electron Devices Meeting, pp. 51-54.

@article{b22aedc5cbdb4e0e9d2a7d8b36640c24,

title = "50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics",

abstract = "We have integrate HfO2 and Al2O3 gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry (1,2). The transistors are among the first reported with ALD HfO2 gate dielectrics, and have HfO2 target equivalent oxide thickness (tEOTs) down to 13 {\AA}. The poly-crystalline HfO2 films in these VRG nMOSFETs exhibit extremely low gate leakage (GL) current densities of JG ∼ 10-7 A/cm2 at VG-VT,Long = 0.6 V for 15 {\AA} tEOT devices. This indicates that amorphous gate dielectrics may not be necessary to meet GL requirements. HfO2 devices with 50 nm gate length LG exhibit drive currents [normalized by the coded width WC (1)] of 490 μA/μm for 1 V operation (overdrive VGS-VT = 0.6 V) with good short-channel performance. These results demonstrate that ALD is compatible with the demanding VRG geometry, thereby illustrating that it should be well-suited to essentially any novel device structure built with Si-compatible materials.",

author = "Hergenrother, {J. M.} and Wilk, {G. D.} and T. Nigam and Klemens, {F. P.} and D. Monroe and Silverman, {P. J.} and Sorsch, {T. W.} and B. Busch and Green, {M. L.} and Baker, {M. R.} and T. Boone and Bude, {M. K.} and Ciampa, {N. A.} and Ferry, {E. J.} and Fiory, {A. T.} and Hillenius, {S. J.} and Jacobson, {D. C.} and Johnson, {R. W.} and P. Kalavade and Keller, {R. C.} and King, {C. A.} and A. Kornblit and Krautter, {H. W.} and Lee, {J. T.C.} and Mansfield, {W. M.} and Miner, {J. F.} and Morris, {M. D.} and Oh, {S. H.} and Rosamilia, {J. M.} and Sapjeta, {B. J.} and K. Short and K. Steiner and Muller, {D. A.} and Voyles, {P. M.} and Grazul, {J. L.} and Shero, {E. J.} and Givens, {M. E.} and C. Pomarede and M. Mazanec and C. Werkhoven",

year = "2001",

language = "English (US)",

pages = "51--54",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting IEDM 2001 ; Conference date: 02-12-2001 Through 05-12-2001",

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TY - JOUR

T1 - 50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO2 and Al2O3 gate dielectrics

AU - Hergenrother, J. M.

AU - Wilk, G. D.

AU - Nigam, T.

AU - Klemens, F. P.

AU - Monroe, D.

AU - Silverman, P. J.

AU - Sorsch, T. W.

AU - Busch, B.

AU - Green, M. L.

AU - Baker, M. R.

AU - Boone, T.

AU - Bude, M. K.

AU - Ciampa, N. A.

AU - Ferry, E. J.

AU - Fiory, A. T.

AU - Hillenius, S. J.

AU - Jacobson, D. C.

AU - Johnson, R. W.

AU - Kalavade, P.

AU - Keller, R. C.

AU - King, C. A.

AU - Kornblit, A.

AU - Krautter, H. W.

AU - Lee, J. T.C.

AU - Mansfield, W. M.

AU - Miner, J. F.

AU - Morris, M. D.

AU - Oh, S. H.

AU - Rosamilia, J. M.

AU - Sapjeta, B. J.

AU - Short, K.

AU - Steiner, K.

AU - Muller, D. A.

AU - Voyles, P. M.

AU - Grazul, J. L.

AU - Shero, E. J.

AU - Givens, M. E.

AU - Pomarede, C.

AU - Mazanec, M.

AU - Werkhoven, C.

PY - 2001

Y1 - 2001

N2 - We have integrate HfO2 and Al2O3 gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry (1,2). The transistors are among the first reported with ALD HfO2 gate dielectrics, and have HfO2 target equivalent oxide thickness (tEOTs) down to 13 Å. The poly-crystalline HfO2 films in these VRG nMOSFETs exhibit extremely low gate leakage (GL) current densities of JG ∼ 10-7 A/cm2 at VG-VT,Long = 0.6 V for 15 Å tEOT devices. This indicates that amorphous gate dielectrics may not be necessary to meet GL requirements. HfO2 devices with 50 nm gate length LG exhibit drive currents [normalized by the coded width WC (1)] of 490 μA/μm for 1 V operation (overdrive VGS-VT = 0.6 V) with good short-channel performance. These results demonstrate that ALD is compatible with the demanding VRG geometry, thereby illustrating that it should be well-suited to essentially any novel device structure built with Si-compatible materials.

AB - We have integrate HfO2 and Al2O3 gate dielectrics grown by atomic layer chemical vapor deposition (ALD) with poly-Si gate electrodes in the vertical replacement-gate (VRG) MOSFET geometry (1,2). The transistors are among the first reported with ALD HfO2 gate dielectrics, and have HfO2 target equivalent oxide thickness (tEOTs) down to 13 Å. The poly-crystalline HfO2 films in these VRG nMOSFETs exhibit extremely low gate leakage (GL) current densities of JG ∼ 10-7 A/cm2 at VG-VT,Long = 0.6 V for 15 Å tEOT devices. This indicates that amorphous gate dielectrics may not be necessary to meet GL requirements. HfO2 devices with 50 nm gate length LG exhibit drive currents [normalized by the coded width WC (1)] of 490 μA/μm for 1 V operation (overdrive VGS-VT = 0.6 V) with good short-channel performance. These results demonstrate that ALD is compatible with the demanding VRG geometry, thereby illustrating that it should be well-suited to essentially any novel device structure built with Si-compatible materials.

UR - http://www.scopus.com/inward/record.url?scp=0035714562&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035714562&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035714562

SN - 0163-1918

SP - 51

EP - 54

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting IEDM 2001

Y2 - 2 December 2001 through 5 December 2001

ER -

50 nm vertical replacement-gate (VRG) nMOSFETs with ALD HfO₂ and Al₂O₃ gate dielectrics

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