50 nm vertical replacement-gate (VRG) pMOSFETs

Sang Hyun Oh; J. M. Hergenrother; T. Nigam; D. Monroe; F. P. Klemens; A. Kornblit; W. M. Mansfield; M. R. Baker; D. L. Barr; F. H. Baumann; K. J. Bolan; T. Boone; N. A. Ciampa; R. A. Cirelli; D. J. Eaglesham; E. J. Ferry; A. T. Fiory; J. Frackoviak; J. P. Garno; H. J. Gossmann; J. L. Grazul; M. L. Green; S. J. Hillenius; R. W. Johnson; R. C. Keller; C. A. King; R. N. Kleiman; J. T.C. Lee; J. F. Miner; M. D. Morris; C. S. Rafferty; J. M. Rosamilia; K. Short; T. W. Sorsch; A. G. Timko; G. R. Weber; G. D. Wilk; J. D. Plummer

doi:10.1109/IEDM.2000.904260

50 nm vertical replacement-gate (VRG) pMOSFETs

Sang Hyun Oh, J. M. Hergenrother, T. Nigam, D. Monroe, F. P. Klemens, A. Kornblit, W. M. Mansfield, M. R. Baker, D. L. Barr, F. H. Baumann, K. J. Bolan, T. Boone, N. A. Ciampa, R. A. Cirelli, D. J. Eaglesham, E. J. Ferry, A. T. Fiory, J. Frackoviak, J. P. Garno, H. J. GossmannJ. L. Grazul, M. L. Green, S. J. Hillenius, R. W. Johnson, R. C. Keller, C. A. King, R. N. Kleiman, J. T.C. Lee, J. F. Miner, M. D. Morris, C. S. Rafferty, J. M. Rosamilia, K. Short, T. W. Sorsch, A. G. Timko, G. R. Weber, G. D. Wilk, J. D. Plummer

Electrical and Computer Engineering

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19 Scopus citations

Abstract

We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year (1), these devices show promise as a successor to planar MOSFETs for highly-scaled ULSI. Our pMOSFETs retain the key features of the nMOSFETs and add channel doping by ion implantation and raised source/drain extensions (SDEs). We have significantly improved the core VRG process to provide high-performance devices with gate lengths of 100 nm and below. Since both sides of the device pillar drive in parallel, the drive current per μm of coded width can far exceed that of planar MOSFETs. Our 100 nm VRG-pMOSFETs with t_OX = 25 Å drive 615 μA/μm at 1.5 V with I_OFF = 8 nA/μm - 80% more drive than specified in the 1999 ITRS Roadmap at the same I_OFF. We demonstrate 50 nm VRG-pMOSFETs with t_OX = 25 Å that approach the 1.0 V roadmap target of I_ON = 350 μA/μm at I_OFF = 20 nA/μm without the need for a hyperthin (< 20 Å) gate oxide.

Original language	English (US)
Pages (from-to)	65-68
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.2000.904260
State	Published - Jan 1 2000

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Oh, S. H., Hergenrother, J. M., Nigam, T., Monroe, D., Klemens, F. P., Kornblit, A., Mansfield, W. M., Baker, M. R., Barr, D. L., Baumann, F. H., Bolan, K. J., Boone, T., Ciampa, N. A., Cirelli, R. A., Eaglesham, D. J., Ferry, E. J., Fiory, A. T., Frackoviak, J., Garno, J. P., ... Plummer, J. D. (2000). 50 nm vertical replacement-gate (VRG) pMOSFETs. Technical Digest - International Electron Devices Meeting, 65-68. https://doi.org/10.1109/IEDM.2000.904260

Oh, SH, Hergenrother, JM, Nigam, T, Monroe, D, Klemens, FP, Kornblit, A, Mansfield, WM, Baker, MR, Barr, DL, Baumann, FH, Bolan, KJ, Boone, T, Ciampa, NA, Cirelli, RA, Eaglesham, DJ, Ferry, EJ, Fiory, AT, Frackoviak, J, Garno, JP, Gossmann, HJ, Grazul, JL, Green, ML, Hillenius, SJ, Johnson, RW, Keller, RC, King, CA, Kleiman, RN, Lee, JTC, Miner, JF, Morris, MD, Rafferty, CS, Rosamilia, JM, Short, K, Sorsch, TW, Timko, AG, Weber, GR, Wilk, GD & Plummer, JD 2000, '50 nm vertical replacement-gate (VRG) pMOSFETs', Technical Digest - International Electron Devices Meeting, pp. 65-68. https://doi.org/10.1109/IEDM.2000.904260

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title = "50 nm vertical replacement-gate (VRG) pMOSFETs",

abstract = "We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year (1), these devices show promise as a successor to planar MOSFETs for highly-scaled ULSI. Our pMOSFETs retain the key features of the nMOSFETs and add channel doping by ion implantation and raised source/drain extensions (SDEs). We have significantly improved the core VRG process to provide high-performance devices with gate lengths of 100 nm and below. Since both sides of the device pillar drive in parallel, the drive current per μm of coded width can far exceed that of planar MOSFETs. Our 100 nm VRG-pMOSFETs with tOX = 25 {\AA} drive 615 μA/μm at 1.5 V with IOFF = 8 nA/μm - 80% more drive than specified in the 1999 ITRS Roadmap at the same IOFF. We demonstrate 50 nm VRG-pMOSFETs with tOX = 25 {\AA} that approach the 1.0 V roadmap target of ION = 350 μA/μm at IOFF = 20 nA/μm without the need for a hyperthin (< 20 {\AA}) gate oxide.",

author = "Oh, {Sang Hyun} and Hergenrother, {J. M.} and T. Nigam and D. Monroe and Klemens, {F. P.} and A. Kornblit and Mansfield, {W. M.} and Baker, {M. R.} and Barr, {D. L.} and Baumann, {F. H.} and Bolan, {K. J.} and T. Boone and Ciampa, {N. A.} and Cirelli, {R. A.} and Eaglesham, {D. J.} and Ferry, {E. J.} and Fiory, {A. T.} and J. Frackoviak and Garno, {J. P.} and Gossmann, {H. J.} and Grazul, {J. L.} and Green, {M. L.} and Hillenius, {S. J.} and Johnson, {R. W.} and Keller, {R. C.} and King, {C. A.} and Kleiman, {R. N.} and Lee, {J. T.C.} and Miner, {J. F.} and Morris, {M. D.} and Rafferty, {C. S.} and Rosamilia, {J. M.} and K. Short and Sorsch, {T. W.} and Timko, {A. G.} and Weber, {G. R.} and Wilk, {G. D.} and Plummer, {J. D.}",

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doi = "10.1109/IEDM.2000.904260",

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T1 - 50 nm vertical replacement-gate (VRG) pMOSFETs

AU - Oh, Sang Hyun

AU - Hergenrother, J. M.

AU - Nigam, T.

AU - Monroe, D.

AU - Klemens, F. P.

AU - Kornblit, A.

AU - Mansfield, W. M.

AU - Baker, M. R.

AU - Barr, D. L.

AU - Baumann, F. H.

AU - Bolan, K. J.

AU - Boone, T.

AU - Ciampa, N. A.

AU - Cirelli, R. A.

AU - Eaglesham, D. J.

AU - Ferry, E. J.

AU - Fiory, A. T.

AU - Frackoviak, J.

AU - Garno, J. P.

AU - Gossmann, H. J.

AU - Grazul, J. L.

AU - Green, M. L.

AU - Hillenius, S. J.

AU - Johnson, R. W.

AU - Keller, R. C.

AU - King, C. A.

AU - Kleiman, R. N.

AU - Lee, J. T.C.

AU - Miner, J. F.

AU - Morris, M. D.

AU - Rafferty, C. S.

AU - Rosamilia, J. M.

AU - Short, K.

AU - Sorsch, T. W.

AU - Timko, A. G.

AU - Weber, G. R.

AU - Wilk, G. D.

AU - Plummer, J. D.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year (1), these devices show promise as a successor to planar MOSFETs for highly-scaled ULSI. Our pMOSFETs retain the key features of the nMOSFETs and add channel doping by ion implantation and raised source/drain extensions (SDEs). We have significantly improved the core VRG process to provide high-performance devices with gate lengths of 100 nm and below. Since both sides of the device pillar drive in parallel, the drive current per μm of coded width can far exceed that of planar MOSFETs. Our 100 nm VRG-pMOSFETs with tOX = 25 Å drive 615 μA/μm at 1.5 V with IOFF = 8 nA/μm - 80% more drive than specified in the 1999 ITRS Roadmap at the same IOFF. We demonstrate 50 nm VRG-pMOSFETs with tOX = 25 Å that approach the 1.0 V roadmap target of ION = 350 μA/μm at IOFF = 20 nA/μm without the need for a hyperthin (< 20 Å) gate oxide.

AB - We present the first p-channel Vertical Replacement-Gate (VRG) MOSFETs. Like the VRG-nMOSFETs demonstrated last year (1), these devices show promise as a successor to planar MOSFETs for highly-scaled ULSI. Our pMOSFETs retain the key features of the nMOSFETs and add channel doping by ion implantation and raised source/drain extensions (SDEs). We have significantly improved the core VRG process to provide high-performance devices with gate lengths of 100 nm and below. Since both sides of the device pillar drive in parallel, the drive current per μm of coded width can far exceed that of planar MOSFETs. Our 100 nm VRG-pMOSFETs with tOX = 25 Å drive 615 μA/μm at 1.5 V with IOFF = 8 nA/μm - 80% more drive than specified in the 1999 ITRS Roadmap at the same IOFF. We demonstrate 50 nm VRG-pMOSFETs with tOX = 25 Å that approach the 1.0 V roadmap target of ION = 350 μA/μm at IOFF = 20 nA/μm without the need for a hyperthin (< 20 Å) gate oxide.

UR - http://www.scopus.com/inward/record.url?scp=0034453443&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034453443&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2000.904260

DO - 10.1109/IEDM.2000.904260

M3 - Article

AN - SCOPUS:0034453443

SN - 0163-1918

SP - 65

EP - 68

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -

50 nm vertical replacement-gate (VRG) pMOSFETs

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