A 0.2 V, 480 kb subthreshold SRAM with 1 k cells per bitline for ultra-low-voltage computing

Tae Hyoung Kim, Jason Liu, John Keane, Chris H. Kim

Research output: Contribution to journalArticlepeer-review

178 Scopus citations

Fingerprint

Dive into the research topics of 'A 0.2 V, 480 kb subthreshold SRAM with 1 k cells per bitline for ultra-low-voltage computing'. Together they form a unique fingerprint.

Engineering & Materials Science