TY - GEN
T1 - A 1V printed organic DRAM cell based on ion-gel gated transistors with a sub-10nW-per-cell refresh power
AU - Zhang, Wei
AU - Ha, Mingjing
AU - Braga, Daniele
AU - Renn, Michael J.
AU - Frisbie, C. Daniel
AU - Kim, Chris H.
PY - 2011
Y1 - 2011
N2 - Organic thin-film-transistors (OTFTs) are drawing much attention as they have attributes such as structural flexibility, low-temperature processing, large area coverage, and low cost, which make them attractive for large-area electronics. Various forms of OTFTs can enable applications that were not achievable using traditional inorganic transistors and/or surpass them in terms of performance and cost. OTFTs cannot match the performance of silicon-based transistors, but can complement them by enabling electronic flexible systems, which don't have to operate at high-speed. Recently, inkjet printing has become a popular method for low-cost manufacturing of OTFTs making product level implementations feasible. Despite these encouraging developments, the relatively high voltage needed to power up traditional OTFT devices and the lack of a good n-type device presents major circuit design challenges for OTFT-based systems.
AB - Organic thin-film-transistors (OTFTs) are drawing much attention as they have attributes such as structural flexibility, low-temperature processing, large area coverage, and low cost, which make them attractive for large-area electronics. Various forms of OTFTs can enable applications that were not achievable using traditional inorganic transistors and/or surpass them in terms of performance and cost. OTFTs cannot match the performance of silicon-based transistors, but can complement them by enabling electronic flexible systems, which don't have to operate at high-speed. Recently, inkjet printing has become a popular method for low-cost manufacturing of OTFTs making product level implementations feasible. Despite these encouraging developments, the relatively high voltage needed to power up traditional OTFT devices and the lack of a good n-type device presents major circuit design challenges for OTFT-based systems.
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U2 - 10.1109/ISSCC.2011.5746339
DO - 10.1109/ISSCC.2011.5746339
M3 - Conference contribution
AN - SCOPUS:79955733957
SN - 9781612843001
T3 - Digest of Technical Papers - IEEE International Solid-State Circuits Conference
SP - 326
EP - 327
BT - 2011 IEEE International Solid-State Circuits Conference - Digest of Technical Papers, ISSCC 2011
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2011 IEEE International Solid-State Circuits Conference, ISSCC 2011
Y2 - 20 February 2011 through 24 February 2011
ER -