A 1V printed organic DRAM cell based on ion-gel gated transistors with a sub-10nW-per-cell refresh power

Organic thin-film-transistors (OTFTs) are drawing much attention as they have attributes such as structural flexibility, low-temperature processing, large area coverage, and low cost, which make them attractive for large-area electronics. Various forms of OTFTs can enable applications that were not achievable using traditional inorganic transistors and/or surpass them in terms of performance and cost. OTFTs cannot match the performance of silicon-based transistors, but can complement them by enabling electronic flexible systems, which don't have to operate at high-speed. Recently, inkjet printing has become a popular method for low-cost manufacturing of OTFTs making product level implementations feasible. Despite these encouraging developments, the relatively high voltage needed to power up traditional OTFT devices and the lack of a good n-type device presents major circuit design challenges for OTFT-based systems.