A 300-mm wafer-level threedimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding

F. Liu; R. R. Yu; A. M. Young; L. Shi; K. A. Jenkins; X. Gu; N. R. Klymko; S. Purushothaman; S. J. Koester; W. Haensch

doi:10.4032/9789814303828

A 300-mm wafer-level threedimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding

F. Liu, R. R. Yu, A. M. Young, L. Shi, K. A. Jenkins, X. Gu, N. R. Klymko, S. Purushothaman, S. J. Koester, W. Haensch

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Original language	English (US)
Title of host publication	3D Integration for VLSI Systems
Publisher	Pan Stanford Publishing Pte. Ltd.
Pages	263-295
Number of pages	33
ISBN (Electronic)	9789814303828
ISBN (Print)	9789814303811
DOIs	https://doi.org/10.4032/9789814303828
State	Published - Apr 19 2016

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Liu, F., Yu, R. R., Young, A. M., Shi, L., Jenkins, K. A., Gu, X., Klymko, N. R., Purushothaman, S., Koester, S. J., & Haensch, W. (2016). A 300-mm wafer-level threedimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding. In 3D Integration for VLSI Systems (pp. 263-295). Pan Stanford Publishing Pte. Ltd.. https://doi.org/10.4032/9789814303828

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AU - Jenkins, K. A.

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AU - Haensch, W.

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A 300-mm wafer-level threedimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding

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