A 300-mm wafer-level threedimensional integration scheme using tungsten through-silicon via and hybrid cu-adhesive bonding

F. Liu, R. R. Yu, A. M. Young, L. Shi, K. A. Jenkins, X. Gu, N. R. Klymko, S. Purushothaman, S. J. Koester, W. Haensch

Research output: Chapter in Book/Report/Conference proceedingChapter

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