A 4 kbit synchronous static random access memory based upon delta-doped complementary heterostructure insulated gate field effect transistor technology

D. E. Grider, I. R. Mactaggart, J. C. Nohava, J. J. Stronczer, P. P. Ruden, T. E. Nohava, D. Fulkerson, D. E. Tetzlaff

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

13 Scopus citations

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Engineering & Materials Science