A chemical approach for synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films

M. P. Suryawanshi; S. W. Shin; U. V. Ghorpade; K. V. Gurav; G. L. Agawane; Chang Woo Hong; Jae Ho Yun; P. S. Patil; Jin Hyeok Kim; A. V. Moholkar

doi:10.1016/j.solener.2014.09.008

A chemical approach for synthesis of photoelectrochemically active Cu₂ZnSnS₄ (CZTS) thin films

M. P. Suryawanshi, S. W. Shin, U. V. Ghorpade, K. V. Gurav, G. L. Agawane, Chang Woo Hong, Jae Ho Yun, P. S. Patil, Jin Hyeok Kim, A. V. Moholkar

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

A cost-effective chemical approach is developed for the synthesis of photoelectrochemically active Cu₂ZnSnS₄ (CZTS) thin films. More specifically, CZTS precursor thin films are prepared by the sequential deposition of Cu₂SnS₃ and ZnS layers using a successive ionic adsorption and reaction (SILAR) technique. The CZTS precursor thin films are sulfurized at different temperatures ranging from 500 to 575°C at intervals of 25°C. The influence of different sulfurization temperatures on the structural, compositional, morphological, and optical properties, as well as on the photoelectrochemical performance is studied. The films sulfurized at 575°C showed a prominent kesterite phase with a nearly stoichiometric composition, dense microstructure with the desired thickness, and an optical band gap energy of 1.47eV. The photoelectrochemical (PEC) cell fabricated using CZTS thin film sulfurized at 575°C showed the highest short circuit current density (J_sc) of 8.27mA/cm² with a power conversion efficiency (η) of 1.06%.

Original language	English (US)
Pages (from-to)	221-230
Number of pages	10
Journal	Solar Energy
Volume	110
DOIs	https://doi.org/10.1016/j.solener.2014.09.008
State	Published - Dec 1 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier Ltd.

Keywords

1.06% Conversion efficiency
CuZnSnS (CZTS)
Novel approach of successive ionic adsorption and reaction (SILAR)
TFSCs

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title = "A chemical approach for synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films",

abstract = "A cost-effective chemical approach is developed for the synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films. More specifically, CZTS precursor thin films are prepared by the sequential deposition of Cu2SnS3 and ZnS layers using a successive ionic adsorption and reaction (SILAR) technique. The CZTS precursor thin films are sulfurized at different temperatures ranging from 500 to 575°C at intervals of 25°C. The influence of different sulfurization temperatures on the structural, compositional, morphological, and optical properties, as well as on the photoelectrochemical performance is studied. The films sulfurized at 575°C showed a prominent kesterite phase with a nearly stoichiometric composition, dense microstructure with the desired thickness, and an optical band gap energy of 1.47eV. The photoelectrochemical (PEC) cell fabricated using CZTS thin film sulfurized at 575°C showed the highest short circuit current density (Jsc) of 8.27mA/cm2 with a power conversion efficiency (η) of 1.06%.",

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AU - Gurav, K. V.

AU - Agawane, G. L.

AU - Hong, Chang Woo

AU - Yun, Jae Ho

AU - Patil, P. S.

AU - Kim, Jin Hyeok

AU - Moholkar, A. V.

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AB - A cost-effective chemical approach is developed for the synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films. More specifically, CZTS precursor thin films are prepared by the sequential deposition of Cu2SnS3 and ZnS layers using a successive ionic adsorption and reaction (SILAR) technique. The CZTS precursor thin films are sulfurized at different temperatures ranging from 500 to 575°C at intervals of 25°C. The influence of different sulfurization temperatures on the structural, compositional, morphological, and optical properties, as well as on the photoelectrochemical performance is studied. The films sulfurized at 575°C showed a prominent kesterite phase with a nearly stoichiometric composition, dense microstructure with the desired thickness, and an optical band gap energy of 1.47eV. The photoelectrochemical (PEC) cell fabricated using CZTS thin film sulfurized at 575°C showed the highest short circuit current density (Jsc) of 8.27mA/cm2 with a power conversion efficiency (η) of 1.06%.

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