A facile method for patterning substrates with zinc oxide nanowires

Jeong Hyun Cho; Elizabeth W. Cha; David Gracias

doi:10.1557/proc-1174-v07-01

A facile method for patterning substrates with zinc oxide nanowires

Jeong Hyun Cho, Elizabeth W. Cha, David Gracias

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Conventional growth of zinc oxide (ZnO) nanowires (NWs) is typically carried out using vapor liquid solid (VLS) and chemical vapor deposition (CVD) methods. While these methods are effective, they often involve the use of specialty gasses and equipment. We have discovered that ZnO NWs grow spontaneously from zinc (Zn) films (thermally evaporated on silicon (Si) substrates) when the films are merely heated on a hot-plate in air at ambient pressures for 10 minutes. This process does not involve any metal catalysts, seed layers, specialty gasses or surface treatments in forming patterned regions (on silicon substrates) of NWs with typical diameters in the range of 20-50 nm and lengths of 2-3 μm.

Original language	English (US)
Title of host publication	Functional Metal-Oxide Nanostructures
Publisher	Materials Research Society
Pages	51-55
Number of pages	5
ISBN (Print)	9781605111476
DOIs	https://doi.org/10.1557/proc-1174-v07-01
State	Published - Jan 1 2009
Event	2009 MRS Spring Meeting: Functional Metal-Oxide Nanostructures - San Francisco, CA, United States Duration: Apr 14 2009 → Apr 17 2009

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	1174
ISSN (Print)	0272-9172

Other

Other	2009 MRS Spring Meeting: Functional Metal-Oxide Nanostructures
Country	United States
City	San Francisco, CA
Period	4/14/09 → 4/17/09

Access

10.1557/proc-1174-v07-01

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Cho, JH, Cha, EW & Gracias, D 2009, A facile method for patterning substrates with zinc oxide nanowires. in Functional Metal-Oxide Nanostructures. Materials Research Society Symposium Proceedings, vol. 1174, Materials Research Society, pp. 51-55, 2009 MRS Spring Meeting: Functional Metal-Oxide Nanostructures, San Francisco, CA, United States, 4/14/09. https://doi.org/10.1557/proc-1174-v07-01

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abstract = "Conventional growth of zinc oxide (ZnO) nanowires (NWs) is typically carried out using vapor liquid solid (VLS) and chemical vapor deposition (CVD) methods. While these methods are effective, they often involve the use of specialty gasses and equipment. We have discovered that ZnO NWs grow spontaneously from zinc (Zn) films (thermally evaporated on silicon (Si) substrates) when the films are merely heated on a hot-plate in air at ambient pressures for 10 minutes. This process does not involve any metal catalysts, seed layers, specialty gasses or surface treatments in forming patterned regions (on silicon substrates) of NWs with typical diameters in the range of 20-50 nm and lengths of 2-3 μm.",

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N2 - Conventional growth of zinc oxide (ZnO) nanowires (NWs) is typically carried out using vapor liquid solid (VLS) and chemical vapor deposition (CVD) methods. While these methods are effective, they often involve the use of specialty gasses and equipment. We have discovered that ZnO NWs grow spontaneously from zinc (Zn) films (thermally evaporated on silicon (Si) substrates) when the films are merely heated on a hot-plate in air at ambient pressures for 10 minutes. This process does not involve any metal catalysts, seed layers, specialty gasses or surface treatments in forming patterned regions (on silicon substrates) of NWs with typical diameters in the range of 20-50 nm and lengths of 2-3 μm.

AB - Conventional growth of zinc oxide (ZnO) nanowires (NWs) is typically carried out using vapor liquid solid (VLS) and chemical vapor deposition (CVD) methods. While these methods are effective, they often involve the use of specialty gasses and equipment. We have discovered that ZnO NWs grow spontaneously from zinc (Zn) films (thermally evaporated on silicon (Si) substrates) when the films are merely heated on a hot-plate in air at ambient pressures for 10 minutes. This process does not involve any metal catalysts, seed layers, specialty gasses or surface treatments in forming patterned regions (on silicon substrates) of NWs with typical diameters in the range of 20-50 nm and lengths of 2-3 μm.

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