TY - JOUR
T1 - A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymers
AU - Blachut, Gregory
AU - Sirard, Stephen M.
AU - Maher, Michael J.
AU - Asano, Yusuke
AU - Someya, Yasunobu
AU - Lane, Austin P.
AU - Durand, William J.
AU - Bates, Christopher M.
AU - Dinhobl, Andrew M.
AU - Gronheid, Roel
AU - Hymes, Diane
AU - Ellison, Christopher J.
AU - Willson, C. Grant
N1 - Publisher Copyright:
© 2016 American Chemical Society.
PY - 2016/12/27
Y1 - 2016/12/27
N2 - The directed self-assembly (DSA) of a 20 nm full-pitch silicon-containing block copolymer (BCP), poly(4-methoxystyrene-b-4-trimethylsilylstyrene), was performed using a process that produces shallow topography for hybrid chemo-/grapho-epitaxy. This hybrid process produced DSA with fewer defects than the analogous conventional chemo-epitaxial process, and the resulting DSA was also more tolerant of variations in process parameters. Cross-sectional scanning transmission electron microscopy (STEM) with electron energy loss spectroscopy (EELS) confirmed that BCP features spanned the entire film thickness on hybrid process wafers. Both processes were implemented on 300 mm wafers initially prepatterned by 193 nm immersion lithography, which is necessary for economic viability in high-volume manufacturing. Computational analysis of DSA extracted from top-down SEM images demonstrates the influence of process parameters on DSA, facilitating the optimization of guide stripe width, guide stripe pitch, and prepattern surface energy. This work demonstrates the ability of a hybrid process to improve the DSA quality over a conventional chemo-epitaxial process and the potential for high-volume manufacturing with high-χ, silicon-containing BCPs.
AB - The directed self-assembly (DSA) of a 20 nm full-pitch silicon-containing block copolymer (BCP), poly(4-methoxystyrene-b-4-trimethylsilylstyrene), was performed using a process that produces shallow topography for hybrid chemo-/grapho-epitaxy. This hybrid process produced DSA with fewer defects than the analogous conventional chemo-epitaxial process, and the resulting DSA was also more tolerant of variations in process parameters. Cross-sectional scanning transmission electron microscopy (STEM) with electron energy loss spectroscopy (EELS) confirmed that BCP features spanned the entire film thickness on hybrid process wafers. Both processes were implemented on 300 mm wafers initially prepatterned by 193 nm immersion lithography, which is necessary for economic viability in high-volume manufacturing. Computational analysis of DSA extracted from top-down SEM images demonstrates the influence of process parameters on DSA, facilitating the optimization of guide stripe width, guide stripe pitch, and prepattern surface energy. This work demonstrates the ability of a hybrid process to improve the DSA quality over a conventional chemo-epitaxial process and the potential for high-volume manufacturing with high-χ, silicon-containing BCPs.
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U2 - 10.1021/acs.chemmater.6b03633
DO - 10.1021/acs.chemmater.6b03633
M3 - Article
AN - SCOPUS:85008418008
SN - 0897-4756
VL - 28
SP - 8951
EP - 8961
JO - Chemistry of Materials
JF - Chemistry of Materials
IS - 24
ER -