A logic-compatible embedded flash memory featuring a multi-story high voltage switch and a selective refresh scheme

Seung Hwan Song, Ki Chul Chun, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

A logic-compatible embedded flash memory that uses no special devices other than standard core and IO transistors is demonstrated in a low-power standard logic process having a 5nm tunnel oxide. An overstress-free high voltage switch expands the cell V TH window by >170% while a 5T embedded flash memory cell with a selective row refresh scheme is employed for improved endurance.

Original languageEnglish (US)
Title of host publication2012 Symposium on VLSI Circuits, VLSIC 2012
Pages130-131
Number of pages2
DOIs
StatePublished - Sep 28 2012
Event2012 Symposium on VLSI Circuits, VLSIC 2012 - Honolulu, HI, United States
Duration: Jun 13 2012Jun 15 2012

Publication series

NameIEEE Symposium on VLSI Circuits, Digest of Technical Papers

Other

Other2012 Symposium on VLSI Circuits, VLSIC 2012
Country/TerritoryUnited States
CityHonolulu, HI
Period6/13/126/15/12

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