Abstract
In this paper, the skew by data dependent gate loading has been analysized. A method based on the concept of MOS parametric capacitance has been proposed. According to different data dependent of the MOS transistor, including transient channel charge and Miller effects, the values of capacitance in different data loadings have been extracted. Two clock tree routes have been analyzed by using the gate loading effect. Results revealed that the simulation result including the gate loading approaches to the actual ones closely.
Original language | English (US) |
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Title of host publication | Proceedings of 2009 7th Asian Control Conference, ASCC 2009 |
Pages | 547-550 |
Number of pages | 4 |
State | Published - Dec 11 2009 |
Event | 2009 7th Asian Control Conference, ASCC 2009 - Hong Kong, China Duration: Aug 27 2009 → Aug 29 2009 |
Other
Other | 2009 7th Asian Control Conference, ASCC 2009 |
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Country | China |
City | Hong Kong |
Period | 8/27/09 → 8/29/09 |