A non-thermal plasma reactor for the synthesis of Gallium Nitride nanocrystals

R. Anthony, E. Thimsen, J. Johnson, S. Campbell, U. Kortshagen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations

Abstract

Gallium Nitride is of interest due to its direct bandgap, which allows for efficient emission in the near-UV range. Bulk GaN is already in use in solid-state devices that exploit its emissive properties, however, the promise of GaN nanocrystals as tunable emitters for use in light-emitting devices and lasers has led to the recent exploration of nanocrystalline GaN synthesis routes. Here we discuss the use of nonthermal plasmas for the synthesis of nanocrystalline powders of GaN. The particles were examined using transmission electron microscopy and x-ray photoelectron spectroscopy.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
Pages221-224
Number of pages4
StatePublished - May 15 2006
Event2005 Materials Research Society Fall Meeting - Boston, MA, United States
Duration: Nov 28 2005Dec 2 2005

Publication series

NameMaterials Research Society Symposium Proceedings
Volume892
ISSN (Print)0272-9172

Other

Other2005 Materials Research Society Fall Meeting
CountryUnited States
CityBoston, MA
Period11/28/0512/2/05

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