TY - JOUR
T1 - A novel method using SiNW to measure stress in cantilevers
AU - Jiang, Yanfeng
AU - Wang, Jianping
PY - 2009
Y1 - 2009
N2 - A silicon (SiNW) nanowire device, made by the bottom-up method, has been assembled in a MEMS device for measuring stress in cantilevers. The process for assembling a SiNW on a cantilever has been introduced. The current as a function of the voltage applied to a SiNW have been measured, and the different resistances before and after cantilever releasing have been observed. A parameter, η, has been derived based on the resistances. For a fixed sample, a linear relationship between η and the stress in the cantilever has been observed; and, so, it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.
AB - A silicon (SiNW) nanowire device, made by the bottom-up method, has been assembled in a MEMS device for measuring stress in cantilevers. The process for assembling a SiNW on a cantilever has been introduced. The current as a function of the voltage applied to a SiNW have been measured, and the different resistances before and after cantilever releasing have been observed. A parameter, η, has been derived based on the resistances. For a fixed sample, a linear relationship between η and the stress in the cantilever has been observed; and, so, it has been demonstrated that the resistance of SiNW can reflect the variation of the cantilever stress.
KW - Cantilever
KW - MEMS
KW - SiNW
KW - Stress
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U2 - 10.1088/1674-4926/30/6/064007
DO - 10.1088/1674-4926/30/6/064007
M3 - Article
AN - SCOPUS:70349179941
SN - 1674-4926
VL - 30
JO - Journal of Semiconductors
JF - Journal of Semiconductors
IS - 6
M1 - 064007
ER -