A Promising Modified SILAR Sequence for the Synthesis of Photoelectrochemically Active Cu2ZnSnS4 (CZTS) Thin Films

M. P. Suryawanshi, S. W. Shin, G. L. Agawane, K. V. Gurav, U. V. Ghorpade, C. W. Hong, M. A. Gaikwad, P. S. Patil, Jin Hyeok Kim, A. V. Moholkar

Research output: Contribution to journalArticlepeer-review

8 Scopus citations

Abstract

A promising modified SILAR sequence approach has been employed for the synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films. To study the influence of sulfurization temperatures on the CZTS thin films, the CZTS precursor thin films were annealed at temperatures of 520, 540, 560, and 580 °C for 1 h in an H2S (5 %)+Ar (95 %) atmosphere. These films were characterized for their structural, morphological, and optical properties using X-ray diffraction, Raman spectroscopy, field emission scanning electron microscopy, and UV-vis spectrophotometer techniques. The film sulfurized at an optimized temperature of 580 °C shows the formation of a prominent CZTS phase with a dense microstructure and optical band gap energy of 1.38 eV. The photoelectrochemical (PEC) device fabricated using optimized CZTS thin films sulfurized at 580 °C exhibits an open circuit voltage (Voc) of 0.38 V and a short circuit current density (Jsc) of 6.49 mA cm-2, with a power conversion efficiency (η) of 0.96 %.

Original languageEnglish (US)
Pages (from-to)1098-1102
Number of pages5
JournalIsrael Journal of Chemistry
Volume55
Issue number10
DOIs
StatePublished - Oct 1 2015

Keywords

  • CuZnSnS (CZTS)
  • FE-SEM studies
  • Raman spectroscopy
  • SILAR
  • photochemistry

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