A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology

Tony Tae Hyoung Kim, Pong Fei Lu, Keith A. Jenkins, Chris H. Kim

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Ring-oscillator-based test structures that can separately measure the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) degradation effects in digital circuits are presented for high-k metal gate devices. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including frequency degradation sensing circuitry have been implemented in an experimental high-k/metal gate SoI process.

Original languageEnglish (US)
Article number6872552
Pages (from-to)1360-1364
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume23
Issue number7
DOIs
StatePublished - Jul 1 2015

Keywords

  • Bias temperature instability
  • high-k/metal gate
  • on-chip measurement
  • reliability monitor
  • ring oscillator

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