A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology

Tony Tae Hyoung Kim; Pong Fei Lu; Keith A. Jenkins; Chris H. Kim

doi:10.1109/TVLSI.2014.2339364

A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology

Tony Tae Hyoung Kim, Pong Fei Lu, Keith A. Jenkins, Chris H. Kim

Electrical and Computer Engineering

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22 Scopus citations

Abstract

Ring-oscillator-based test structures that can separately measure the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) degradation effects in digital circuits are presented for high-k metal gate devices. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including frequency degradation sensing circuitry have been implemented in an experimental high-k/metal gate SoI process.

Original language	English (US)
Article number	6872552
Pages (from-to)	1360-1364
Number of pages	5
Journal	IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Volume	23
Issue number	7
DOIs	https://doi.org/10.1109/TVLSI.2014.2339364
State	Published - Jul 1 2015

Bibliographical note

Publisher Copyright:
© 1993-2012 IEEE.

Keywords

Bias temperature instability
high-k/metal gate
on-chip measurement
reliability monitor
ring oscillator

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A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology. / Kim, Tony Tae Hyoung; Lu, Pong Fei; Jenkins, Keith A. et al.
In: IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol. 23, No. 7, 6872552, 01.07.2015, p. 1360-1364.

Research output: Contribution to journal › Article › peer-review

@article{5680116799ec4356b525c61618f1ed5c,

title = "A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology",

abstract = "Ring-oscillator-based test structures that can separately measure the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) degradation effects in digital circuits are presented for high-k metal gate devices. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including frequency degradation sensing circuitry have been implemented in an experimental high-k/metal gate SoI process.",

keywords = "Bias temperature instability, high-k/metal gate, on-chip measurement, reliability monitor, ring oscillator",

author = "Kim, {Tony Tae Hyoung} and Lu, {Pong Fei} and Jenkins, {Keith A.} and Kim, {Chris H.}",

note = "Publisher Copyright: {\textcopyright} 1993-2012 IEEE.",

year = "2015",

month = jul,

day = "1",

doi = "10.1109/TVLSI.2014.2339364",

language = "English (US)",

volume = "23",

pages = "1360--1364",

journal = "IEEE Transactions on Very Large Scale Integration (VLSI) Systems",

issn = "1063-8210",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology

AU - Kim, Tony Tae Hyoung

AU - Lu, Pong Fei

AU - Jenkins, Keith A.

AU - Kim, Chris H.

PY - 2015/7/1

Y1 - 2015/7/1

N2 - Ring-oscillator-based test structures that can separately measure the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) degradation effects in digital circuits are presented for high-k metal gate devices. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including frequency degradation sensing circuitry have been implemented in an experimental high-k/metal gate SoI process.

AB - Ring-oscillator-based test structures that can separately measure the negative bias temperature instability (NBTI) and positive bias temperature instability (PBTI) degradation effects in digital circuits are presented for high-k metal gate devices. The mathematical derivation also shows that the structure for frequency degradation measurement can directly be used for estimating the portion of the NBTI and PBTI in the conventional ring oscillator. The proposed test structures including frequency degradation sensing circuitry have been implemented in an experimental high-k/metal gate SoI process.

KW - Bias temperature instability

KW - high-k/metal gate

KW - on-chip measurement

KW - reliability monitor

KW - ring oscillator

UR - http://www.scopus.com/inward/record.url?scp=85027925903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027925903&partnerID=8YFLogxK

U2 - 10.1109/TVLSI.2014.2339364

DO - 10.1109/TVLSI.2014.2339364

M3 - Article

AN - SCOPUS:85027925903

SN - 1063-8210

VL - 23

SP - 1360

EP - 1364

JO - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

JF - IEEE Transactions on Very Large Scale Integration (VLSI) Systems

IS - 7

M1 - 6872552

ER -

A Ring-Oscillator-Based Reliability Monitor for Isolated Measurement of NBTI and PBTI in High-k/Metal Gate Technology

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Keywords

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