Abstract
Solution-processed semiconductors are seen as a promising route to reducing the cost of the photovoltaic device manufacture. We are reporting a single-layer Schottky photovoltaic device that was fabricated by spin-coating intrinsic silicon nanocrystals (Si NCs) from colloidal suspension. The thin-film formation process was based on Si NCs without any ligand attachment, exchange, or removal reactions. The Schottky junction device showed a photovoltaic response with a power conversion efficiency of 0.02%, a fill factor of 0.26, short circuit-current density of 0.148 mA/cm 2, and open-circuit voltage of 0.51 V.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1253-1256 |
| Number of pages | 4 |
| Journal | Nanoscale Research Letters |
| Volume | 5 |
| Issue number | 8 |
| DOIs | |
| State | Published - 2010 |
Bibliographical note
Funding Information:Acknowledgments This work was supported primarily by the MRSEC Program of the National Science Foundation under Award Number DMR-0819885. Partial support through NSF grant CBET-0500332 is acknowledged. During part of this work, C.Y.L. was supported by a University of Minnesota Doctoral Dissertation Fellowship. We utilized the University of Minnesota Characterization Facility which receives partial support from the NSF under the NNIN program.
Keywords
- Schottky junction
- Silicon nanocrystals
- Solar cell
- Thin film
