Abstract
V3Si crystals have been grown by electron-beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting-transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.
Original language | English (US) |
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Pages (from-to) | 2523-2525 |
Number of pages | 3 |
Journal | Journal of Applied Physics |
Volume | 49 |
Issue number | 4 |
DOIs | |
State | Published - 1978 |