TY - JOUR
T1 - A Simple Phenomenological Model of Tunable SAW Devices Using Magnetostrictive Thin Films
AU - Robbins, William P.
AU - Hietala, Alex
PY - 1988/11
Y1 - 1988/11
N2 - A simple phenomenological model has been developed that is useful for the approximate design of tunable SAW devices using magnetostrictive thin films. The model formulation, based on perturbation theory, relates the maximum magnetic-field dependent velocity change or tunability range to the frequency of operation, film thickness, elastic properties of the film and substrate, and magnetic properties of the film. Iron-terbium-boron films deposited on quartz and lithium niobate substrates were used to verify the formula. A significant variability in the magnetic properties of the films were obtained by varying the amount of terbium (0-5 atomic percent) in the film (80 percent Fe and 15-20 percent B). Other films including Fe-Tb, Fe-Si, Fe-B, Co-Cr, and Ni, which were studied by other investigators, were also used to check the model. A simple figure of merit for comparing various film-substrate combinations, independent of device dimensions was also derived and experimentally checked.
AB - A simple phenomenological model has been developed that is useful for the approximate design of tunable SAW devices using magnetostrictive thin films. The model formulation, based on perturbation theory, relates the maximum magnetic-field dependent velocity change or tunability range to the frequency of operation, film thickness, elastic properties of the film and substrate, and magnetic properties of the film. Iron-terbium-boron films deposited on quartz and lithium niobate substrates were used to verify the formula. A significant variability in the magnetic properties of the films were obtained by varying the amount of terbium (0-5 atomic percent) in the film (80 percent Fe and 15-20 percent B). Other films including Fe-Tb, Fe-Si, Fe-B, Co-Cr, and Ni, which were studied by other investigators, were also used to check the model. A simple figure of merit for comparing various film-substrate combinations, independent of device dimensions was also derived and experimentally checked.
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U2 - 10.1109/58.9328
DO - 10.1109/58.9328
M3 - Article
AN - SCOPUS:0024112952
SN - 0885-3010
VL - 35
SP - 718
EP - 722
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 6
ER -