SiCx nano dots and nano wires with sizes from 60 nm to approximately 2 μm were fabricated using liquid cell transmission electron microscope (TEM) technology. A SiCl4 in CH2Cl2 solution was sealed between two pieces of Si3N4 window grids in an in situ TEM liquid cell. Focused 200 keV electron beams were used to bombard the sealed precursors, which caused decomposition of the precursor materials, and deposition of the nano materials on the Si3N 4 window substrates. The size of nano dots increased with beam exposure time, following an approximately exponential relationship with the beam doses. Secondary electrons are attributed as the primary sources for the Si and C reduction. A nano device was formed from a deposited nano wire, with its electrical property characterized. Individual SiCx nano features have been made using in situ liquid cell TEM with electron beam induced deposition (EBID) method, and subsquently fabricated into nano devices with ex situ focused ion beam (FIB) electrode deposition.
- electron beam induced deposition
- in situ TEM