A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure

Y. S. Lim; J. S. Jeong; J. Y. Lee; H. S. Kim; H. K. Shon; H. K. Kim; D. W. Moon

doi:10.1007/s11664-002-0110-y

A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure

Y. S. Lim, J. S. Jeong, J. Y. Lee, H. S. Kim, H. K. Shon, H. K. Kim, D. W. Moon

Chemical Engineering and Materials Science

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Abstract

A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface. After dry thermal oxidation at 900°C, the Ge composition in the pileup layer was significantly reduced and strain relaxation by defect formation was prevented due to the graded Ge distribution. To homogenize the Ge distribution between the pileup layer and remaining SiGe layer, the oxidized layers were postannealed. The homogenization is significantly enhanced by strain-induced diffusion, and it was confirmed by uphill diffusion of Ge. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures.

Original language	English (US)
Article number	110
Pages (from-to)	529-534
Number of pages	6
Journal	Journal of Electronic Materials
Volume	31
Issue number	5
DOIs	https://doi.org/10.1007/s11664-002-0110-y
State	Published - May 2002

Bibliographical note

Funding Information:
The authors acknowledge the support of this research by the Ministry of Science and Technology of Korea through the National Research Laboratory Program.

Keywords

Oxidation
Pileup
Postannealing
SiGe
Strain-induced diffusion

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title = "A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure",

abstract = "A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface. After dry thermal oxidation at 900°C, the Ge composition in the pileup layer was significantly reduced and strain relaxation by defect formation was prevented due to the graded Ge distribution. To homogenize the Ge distribution between the pileup layer and remaining SiGe layer, the oxidized layers were postannealed. The homogenization is significantly enhanced by strain-induced diffusion, and it was confirmed by uphill diffusion of Ge. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures.",

keywords = "Oxidation, Pileup, Postannealing, SiGe, Strain-induced diffusion",

author = "Lim, {Y. S.} and Jeong, {J. S.} and Lee, {J. Y.} and Kim, {H. S.} and Shon, {H. K.} and Kim, {H. K.} and Moon, {D. W.}",

note = "Funding Information: The authors acknowledge the support of this research by the Ministry of Science and Technology of Korea through the National Research Laboratory Program.",

year = "2002",

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doi = "10.1007/s11664-002-0110-y",

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T1 - A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure

AU - Lim, Y. S.

AU - Jeong, J. S.

AU - Lee, J. Y.

AU - Kim, H. S.

AU - Shon, H. K.

AU - Kim, H. K.

AU - Moon, D. W.

N1 - Funding Information: The authors acknowledge the support of this research by the Ministry of Science and Technology of Korea through the National Research Laboratory Program.

PY - 2002/5

Y1 - 2002/5

N2 - A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface. After dry thermal oxidation at 900°C, the Ge composition in the pileup layer was significantly reduced and strain relaxation by defect formation was prevented due to the graded Ge distribution. To homogenize the Ge distribution between the pileup layer and remaining SiGe layer, the oxidized layers were postannealed. The homogenization is significantly enhanced by strain-induced diffusion, and it was confirmed by uphill diffusion of Ge. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures.

AB - A study on the dry thermal oxidation of a graded SiGe layer was performed. To reduce the Ge pileup effect during the thermal oxidation, the SiGe layer was deposited with much lower Ge content near the free surface than near the SiGe/Si heterointerface. After dry thermal oxidation at 900°C, the Ge composition in the pileup layer was significantly reduced and strain relaxation by defect formation was prevented due to the graded Ge distribution. To homogenize the Ge distribution between the pileup layer and remaining SiGe layer, the oxidized layers were postannealed. The homogenization is significantly enhanced by strain-induced diffusion, and it was confirmed by uphill diffusion of Ge. This result can propose an alternative oxidation method of strained SiGe/Si heterostructures.

KW - Oxidation

KW - Pileup

KW - Postannealing

KW - SiGe

KW - Strain-induced diffusion

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JF - Journal of Electronic Materials

IS - 5

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ER -

A study of the oxidation behavior and the postannealing effect in a graded SiGe/Si heterostructure

Abstract

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Keywords

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