A study on the epitaxy nature and properties of 3 wt% ga-doped epitaxial ZnO thin film on Al2O3 (0 0 0 1) substrates

Seung Wook Shin; Gyoung Hoon Lee; A. V. Moholkar; Jong Ha Moon; Gi Seok Heo; Tae Won Kim; Jin Hyeok Kim; Jeong Yong Lee

doi:10.1016/j.jcrysgro.2011.03.012

A study on the epitaxy nature and properties of 3 wt% ga-doped epitaxial ZnO thin film on Al₂O₃ (0 0 0 1) substrates

Seung Wook Shin, Gyoung Hoon Lee, A. V. Moholkar, Jong Ha Moon, Gi Seok Heo, Tae Won Kim, Jin Hyeok Kim, Jeong Yong Lee

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

3 wt% ga-doped ZnO (gZO) thin films were deposited on Al₂O ₃ (0 0 0 1) substrates by RF magnetron sputtering at different growth temperatures ranging from 350 to 750 °C. The crystallinity, microstructure, epitaxial nature, and optical and electrical properties of the gZO thin films were examined by X-ray diffraction (XRD), transmission-electron microscopy (TEM), UVvisible spectroscopy and Hall measurements. XRD and TEM showed that the gZO thin films deposited below a growth temperature of 450 °C grew epitaxially with an orientation relationship of (0001)[ _112̄0]gZO||(0001)[112̄0]A^l2O3. However, the gZO thin films deposited above 550 °C were in polycrystalline hexagonal wurtzite phase with c-axis preferred. The crystallinity of the gZO thin films deteriorated with increasing growth temperature. The gZO thin film deposited at 350 °C showed the lowest electrical resistivity of 1.13×10^-4Ω cm. The electrical properties of the gZO thin films also deteriorated with increasing growth temperature. UVvisible spectroscopy showed that the gZO thin films are highly transparent (from 75% to 90%) in the visible region. In addition, the band gap of the deposited thin films decreased from 3.5 to 3.2 eV with increasing growth temperature.

Original language	English (US)
Pages (from-to)	51-56
Number of pages	6
Journal	Journal of Crystal Growth
Volume	322
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.03.012
State	Published - May 1 2011

Keywords

A1. X-ray diffraction
A2. Single crystal growth
B1. Sapphire
B2. Semiconducting materials
B3. Solar cells

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title = "A study on the epitaxy nature and properties of 3 wt% ga-doped epitaxial ZnO thin film on Al2O3 (0 0 0 1) substrates",

abstract = "3 wt% ga-doped ZnO (gZO) thin films were deposited on Al2O 3 (0 0 0 1) substrates by RF magnetron sputtering at different growth temperatures ranging from 350 to 750 °C. The crystallinity, microstructure, epitaxial nature, and optical and electrical properties of the gZO thin films were examined by X-ray diffraction (XRD), transmission-electron microscopy (TEM), UVvisible spectroscopy and Hall measurements. XRD and TEM showed that the gZO thin films deposited below a growth temperature of 450 °C grew epitaxially with an orientation relationship of (0001)[ 11{\=2}0]gZO||(0001)[11{\=2}0]Al2O3. However, the gZO thin films deposited above 550 °C were in polycrystalline hexagonal wurtzite phase with c-axis preferred. The crystallinity of the gZO thin films deteriorated with increasing growth temperature. The gZO thin film deposited at 350 °C showed the lowest electrical resistivity of 1.13×10-4Ω cm. The electrical properties of the gZO thin films also deteriorated with increasing growth temperature. UVvisible spectroscopy showed that the gZO thin films are highly transparent (from 75% to 90%) in the visible region. In addition, the band gap of the deposited thin films decreased from 3.5 to 3.2 eV with increasing growth temperature.",

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author = "Shin, {Seung Wook} and Lee, {Gyoung Hoon} and Moholkar, {A. V.} and Moon, {Jong Ha} and Heo, {Gi Seok} and Kim, {Tae Won} and Kim, {Jin Hyeok} and Lee, {Jeong Yong}",

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T1 - A study on the epitaxy nature and properties of 3 wt% ga-doped epitaxial ZnO thin film on Al2O3 (0 0 0 1) substrates

AU - Shin, Seung Wook

AU - Lee, Gyoung Hoon

AU - Moholkar, A. V.

AU - Moon, Jong Ha

AU - Heo, Gi Seok

AU - Kim, Tae Won

AU - Kim, Jin Hyeok

AU - Lee, Jeong Yong

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N2 - 3 wt% ga-doped ZnO (gZO) thin films were deposited on Al2O 3 (0 0 0 1) substrates by RF magnetron sputtering at different growth temperatures ranging from 350 to 750 °C. The crystallinity, microstructure, epitaxial nature, and optical and electrical properties of the gZO thin films were examined by X-ray diffraction (XRD), transmission-electron microscopy (TEM), UVvisible spectroscopy and Hall measurements. XRD and TEM showed that the gZO thin films deposited below a growth temperature of 450 °C grew epitaxially with an orientation relationship of (0001)[ 112̄0]gZO||(0001)[112̄0]Al2O3. However, the gZO thin films deposited above 550 °C were in polycrystalline hexagonal wurtzite phase with c-axis preferred. The crystallinity of the gZO thin films deteriorated with increasing growth temperature. The gZO thin film deposited at 350 °C showed the lowest electrical resistivity of 1.13×10-4Ω cm. The electrical properties of the gZO thin films also deteriorated with increasing growth temperature. UVvisible spectroscopy showed that the gZO thin films are highly transparent (from 75% to 90%) in the visible region. In addition, the band gap of the deposited thin films decreased from 3.5 to 3.2 eV with increasing growth temperature.

AB - 3 wt% ga-doped ZnO (gZO) thin films were deposited on Al2O 3 (0 0 0 1) substrates by RF magnetron sputtering at different growth temperatures ranging from 350 to 750 °C. The crystallinity, microstructure, epitaxial nature, and optical and electrical properties of the gZO thin films were examined by X-ray diffraction (XRD), transmission-electron microscopy (TEM), UVvisible spectroscopy and Hall measurements. XRD and TEM showed that the gZO thin films deposited below a growth temperature of 450 °C grew epitaxially with an orientation relationship of (0001)[ 112̄0]gZO||(0001)[112̄0]Al2O3. However, the gZO thin films deposited above 550 °C were in polycrystalline hexagonal wurtzite phase with c-axis preferred. The crystallinity of the gZO thin films deteriorated with increasing growth temperature. The gZO thin film deposited at 350 °C showed the lowest electrical resistivity of 1.13×10-4Ω cm. The electrical properties of the gZO thin films also deteriorated with increasing growth temperature. UVvisible spectroscopy showed that the gZO thin films are highly transparent (from 75% to 90%) in the visible region. In addition, the band gap of the deposited thin films decreased from 3.5 to 3.2 eV with increasing growth temperature.

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KW - A2. Single crystal growth

KW - B1. Sapphire

KW - B2. Semiconducting materials

KW - B3. Solar cells

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