A tale of two precursors: uhv-cvd of tio2 from titanium nitrate and titanium isopropoxide

Wavne L. Gladfelter; Charles J. Taylor; David C. Oilmenr; Daniel G. Colombo; G. D. Wilk; Stephen A. Campbell; Jeff Roberts

A tale of two precursors: uhv-cvd of tio₂ from titanium nitrate and titanium isopropoxide

Wavne L. Gladfelter, Charles J. Taylor, David C. Oilmenr, Daniel G. Colombo, G. D. Wilk, Stephen A. Campbell, Jeff Roberts

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Abstract

A side-by-side comparison of the TiO₂ deposition kinetics and the corresponding film microstructures using titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate was conducted at low pressures (< ICH Torr) in an ultrahigh vacuum chemical vapor deposition reactor. Titanium(IV) nitrate exhibited a lower activation energy of reaction (E_r = 98 kJ/mol) which allowed deposition at lower temperatures compared to titanium(IV) isopropoxide (E_r = 135 kJ/mol). Comparison of the microstructures of films deposited at similar temperatures revealed significant differences in the reaction rate limited kinetic regime. As the growth rates of the two precursors converged in the flux-limited regime, the respective microstructures became indistinguishable.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	349-354
Number of pages	6
Volume	567
State	Published - 1999

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abstract = "A side-by-side comparison of the TiO2 deposition kinetics and the corresponding film microstructures using titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate was conducted at low pressures (< ICH Torr) in an ultrahigh vacuum chemical vapor deposition reactor. Titanium(IV) nitrate exhibited a lower activation energy of reaction (Er = 98 kJ/mol) which allowed deposition at lower temperatures compared to titanium(IV) isopropoxide (Er = 135 kJ/mol). Comparison of the microstructures of films deposited at similar temperatures revealed significant differences in the reaction rate limited kinetic regime. As the growth rates of the two precursors converged in the flux-limited regime, the respective microstructures became indistinguishable.",

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T2 - uhv-cvd of tio2 from titanium nitrate and titanium isopropoxide

AU - Gladfelter, Wavne L.

AU - Taylor, Charles J.

AU - Oilmenr, David C.

AU - Colombo, Daniel G.

AU - Wilk, G. D.

AU - Campbell, Stephen A.

AU - Roberts, Jeff

PY - 1999

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N2 - A side-by-side comparison of the TiO2 deposition kinetics and the corresponding film microstructures using titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate was conducted at low pressures (< ICH Torr) in an ultrahigh vacuum chemical vapor deposition reactor. Titanium(IV) nitrate exhibited a lower activation energy of reaction (Er = 98 kJ/mol) which allowed deposition at lower temperatures compared to titanium(IV) isopropoxide (Er = 135 kJ/mol). Comparison of the microstructures of films deposited at similar temperatures revealed significant differences in the reaction rate limited kinetic regime. As the growth rates of the two precursors converged in the flux-limited regime, the respective microstructures became indistinguishable.

AB - A side-by-side comparison of the TiO2 deposition kinetics and the corresponding film microstructures using titanium(IV) isopropoxide and anhydrous titanium(IV) nitrate was conducted at low pressures (< ICH Torr) in an ultrahigh vacuum chemical vapor deposition reactor. Titanium(IV) nitrate exhibited a lower activation energy of reaction (Er = 98 kJ/mol) which allowed deposition at lower temperatures compared to titanium(IV) isopropoxide (Er = 135 kJ/mol). Comparison of the microstructures of films deposited at similar temperatures revealed significant differences in the reaction rate limited kinetic regime. As the growth rates of the two precursors converged in the flux-limited regime, the respective microstructures became indistinguishable.

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A tale of two precursors: uhv-cvd of tio₂ from titanium nitrate and titanium isopropoxide

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