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We study potential and electron density depth profiles in accumulation, inversion, and depletion layers in crystals with a large and nonlinear dielectric response such as SrTiO3. We describe the lattice dielectric response using the Landau-Ginzburg free energy expansion. In accumulation and inversion layers we arrive at new nonlinear dependencies of the width d of the electron gas on an applied electric field D0. Particularly important is the predicted electron density profile of accumulation layers (including the LaAlO3/SrTiO3 interface) n(x) (x+d)-12/7, where d D0-7/5. We compare this profile with available data and find satisfactory agreement. For a depletion layer we find an unconventional nonlinear dependence of the capacitance on voltage. We also evaluate the role of spatial dispersion in the dielectric response by adding a gradient term to the Landau-Ginzburg free energy.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Mar 6 2015|
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Reporting period for MRSEC
- Period 1