Accurate Measurement Technique for Base Transit Time in Heterojunction Bipolar Transistors

S. Lee; A. Gopinath; S. J. Pachuta

doi:10.1049/el:19910973

Accurate Measurement Technique for Base Transit Time in Heterojunction Bipolar Transistors

S. Lee, A. Gopinath, S. J. Pachuta

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0 ʯ 10¹⁹cm^-3of AIGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the AI_xGa_1-xAs/GaAs composition graded base HBT was also measured using this technique.

Original language	English (US)
Pages (from-to)	1551-1553
Number of pages	3
Journal	Electronics Letters
Volume	27
Issue number	17
DOIs	https://doi.org/10.1049/el:19910973
State	Published - May 9 1991

Keywords

Bipolar devices
Semiconductor devices and materials
Transistors

Access

10.1049/el:19910973

OpenUrl availability

Full text

Cite this

@article{80bb2f90706644f0aae77670b81832fb,

title = "Accurate Measurement Technique for Base Transit Time in Heterojunction Bipolar Transistors",

abstract = "The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0 ʯ 1019cm-3of AIGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the AIxGa1-xAs/GaAs composition graded base HBT was also measured using this technique.",

keywords = "Bipolar devices, Semiconductor devices and materials, Transistors",

author = "S. Lee and A. Gopinath and Pachuta, {S. J.}",

year = "1991",

month = may,

day = "9",

doi = "10.1049/el:19910973",

language = "English (US)",

volume = "27",

pages = "1551--1553",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "17",

}

TY - JOUR

T1 - Accurate Measurement Technique for Base Transit Time in Heterojunction Bipolar Transistors

AU - Lee, S.

AU - Gopinath, A.

AU - Pachuta, S. J.

PY - 1991/5/9

Y1 - 1991/5/9

N2 - The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0 ʯ 1019cm-3of AIGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the AIxGa1-xAs/GaAs composition graded base HBT was also measured using this technique.

AB - The minority electron mobility, which agrees with the prediction of phase-shift analysis and Monte Carlo simulations, in p-type GaAs base doped to 3.0 ʯ 1019cm-3of AIGaAs/GaAs HBTs at 300 K has been measured using an accurate measurement technique for the base transit time. The base transit time of the AIxGa1-xAs/GaAs composition graded base HBT was also measured using this technique.

KW - Bipolar devices

KW - Semiconductor devices and materials

KW - Transistors

UR - http://www.scopus.com/inward/record.url?scp=0026203903&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0026203903&partnerID=8YFLogxK

U2 - 10.1049/el:19910973

DO - 10.1049/el:19910973

M3 - Article

AN - SCOPUS:0026203903

SN - 0013-5194

VL - 27

SP - 1551

EP - 1553

JO - Electronics Letters

JF - Electronics Letters

IS - 17

ER -

Accurate Measurement Technique for Base Transit Time in Heterojunction Bipolar Transistors

Abstract

Keywords

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this