Acoustic phonon scattering of two-dimensional electrons in GaN/AlGaN heterostructures

W. Knap, E. Borovitskaya, M. S. Shur, L. Hsu, W. Walukiewicz, E. Frayssinet, P. Lorenzini, N. Grandjean, C. Skierbiszewski, P. Prystawko, M. Leszczynski, I. Grzegory

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45 Scopus citations

Abstract

We have measured the temperature dependence of the mobility of the two-dimensional electron gas in AlGaN/GaN heterostructures grown on bulk GaN substrates. The linear dependence of the inverse mobility on temperature at temperatures below 50 K indicates the importance of acoustic phonon scattering in these high mobility heterostructures. Using the temperature dependence of the mobility at a range of carrier densities, we determined the GaN conduction band deformation potential to be ac=9.1±0.7eV. This result provides a crucial parameter for accurate calculations of intrinsic mobility limits in AlGaN/GaN heterostructures.

Original languageEnglish (US)
Pages (from-to)1228-1230
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number7
DOIs
StatePublished - Feb 18 2002

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