Active space division switch fabrics using semiconductor optical amplifiers

S. Kim; Anand Gopinath

Active space division switch fabrics using semiconductor optical amplifiers

S. Kim, Anand Gopinath

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The partial screening in strain InGaAsP based quantum well (QW) grown on (111) substrate and its gain spectrum under current injection is studied. The calculated gain spectra shows blueshift of the gain peak as the carrier density increased. The gain peak shifted from 0.81 eV (1.530 μm) to 0.85 eV (1.458 μm) as carrier density increases from 1×10¹⁸ cm^-3 to 2×10¹⁸ cm^-3. This suggests the possibility of a tunable optical amplifier controlled by current injection operating at the wavelength of around 1300 nm.

Original language	English (US)
Pages (from-to)	202-203
Number of pages	2
Journal	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume	1
State	Published - Dec 1 1997

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Active space division switch fabrics using semiconductor optical amplifiers

Abstract

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