Adsorption of TiCl4 and initial stages of Ti growth on Si(001)

T. Mitsui, E. Hill, R. Curtis, E. Ganz

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

The growth of TiCl4 and Ti on Si(001) is investigated. The adsorption is analyzed using scanning tunneling microscopy over a range of temperatures. Results show that intact TiCl4, Ti and Cl, and mobile TiCl2 on the Si surface are identified at 300 K.

Original languageEnglish (US)
Pages (from-to)563-567
Number of pages5
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume19
Issue number2
DOIs
StatePublished - Mar 2001

Fingerprint

Dive into the research topics of 'Adsorption of TiCl<sub>4</sub> and initial stages of Ti growth on Si(001)'. Together they form a unique fingerprint.

Cite this