Abstract
The growth of TiCl4 and Ti on Si(001) is investigated. The adsorption is analyzed using scanning tunneling microscopy over a range of temperatures. Results show that intact TiCl4, Ti and Cl, and mobile TiCl2 on the Si surface are identified at 300 K.
Original language | English (US) |
---|---|
Pages (from-to) | 563-567 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films |
Volume | 19 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2001 |