Abstract
Ribbon-shaped single crystal transistors based on naphthalene diimide Cl2-NDI exhibit excellent n-channel performance with the mobility as high as 8.6 cm2V-1s-1 in air. The combination of ambient stability and high mobility n-channel transport closes the gap between p- and n-channel SCFETs and opens the door for the manufacture of high performance complementary organic circuits.
Original language | English (US) |
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Pages (from-to) | 6951-6955 |
Number of pages | 5 |
Journal | Advanced Materials |
Volume | 25 |
Issue number | 48 |
DOIs | |
State | Published - Dec 23 2013 |
Keywords
- air stability
- field-effect transistors
- n-channel semiconductor
- naphthalene diimides
- organic single crystal