The design of a high modulation response multiple-quantum-well ridge waveguide laser in AlGaAs-GaAs, with low parasitics is discussed. The device was fabricated on a semi-insulating substrate with a wide top contact, and airbridges have been used to connect the ridge top contact to the bonding pads on the semi-insulating substrate. The 3-dB frequency response of the laser has been measured to be 21 GHz, which is a record for unstrained quantum-well AlGaAs-GaAs lasers.
Bibliographical noteFunding Information:
Manuscript received June 12, 1995; revised September 25, 1995. This work was supported in part by NSF, AFPA (through a contract with Rome Laboratory, Hancom Field AFB, MA), and the University of Minnesota Supercomputer Institute. The authors are with the Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455 USA. Publisher Item Identifier S 1041-1 135(96)00523-X.
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