We present results of experimental and theoretical studies of pseudomorphic AlGaAs/InGaAs/GaAs Quantum Well Doped Channel Heterostructure Field EfTect Transistors (QW-DCHFET’s). The channel doping was introduced in two ways: during growth by Molecular Beam Epitaxy or by direct ion implantation. The latter technique may be advantageous for fabrication of complementary DCHFET circuits. We measured peak transconductances of 471 mS/mm, and peak drain currents of 660 mA/mm in 0.6 um gate doped channel devices. The results show the advantages of the DCHFET over standard heterostructure FET structures and their potential for high-speed IC applications. Self-consistent calculations of the subband structure show that the potential barrier between the quasi-Fermi level in the channel and the bottom of the conduction band in the barrier layer is considerably larger for the doped channel structure than for the structure with an undoped channel. This lowers the thermionic emission gate current of the doped channel device compared to the undoped channel device.