AlGaAs/InGaAs/GaAs Quantum Well Doped Channel Heterostructure Field Effect Transistors

Chemical Compounds

• Thermionic Emission 100%
• Drain Current 94%
• Transconductance 94%
• Subband 88%
• Molecular Beam Epitaxy 88%
• Potential Barrier 80%
• Ion Implantation 75%
• Conduction Band 66%
• Field Effect 61%
• Application 19%

Engineering & Materials Science

• Semiconductor quantum wells 96%
• Heterojunctions 53%
• Thermionic emission 36%
• Fermi level 35%
• Conduction bands 34%
• Molecular beam epitaxy 31%
• Ion implantation 27%
• Drain current 26%
• Transconductance 24%
• Doping (additives) 22%
• Field effect transistors 21%
• Transistors 17%
• Fabrication 15%
• Networks (circuits) 11%