Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor

Michael G. Simmonds; Wayne L. Gladfelter; Haojiang Li; Peter H. McMurry

Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH₃) as a precursor

Michael G. Simmonds, Wayne L. Gladfelter, Haojiang Li, Peter H. McMurry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Particle formation in the gas phase during the chemical vapor deposition of Al using dimethylethylamine alane was studied. Typical sizes of the crystalline Al particles monitored were in the range 20 nm to 1000 nm. Introducing trace amounts of H₂O, CO and O₂ into the reactor during the flow of the precursor caused an increase in the number of particles. Our results suggested that Al particle formation was induced by impurities in the gas phase although competing mechanisms could not be ruled out.

Original language	English (US)
Title of host publication	Chemical Perspectives of Microelectronic Materials III
Publisher	Publ by Materials Research Society
Pages	317-322
Number of pages	6
ISBN (Print)	1558991778
State	Published - Jan 1 1993
Event	Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials - Boston, MA, USA Duration: Nov 30 1992 → Dec 3 1992

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	282
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials
City	Boston, MA, USA
Period	11/30/92 → 12/3/92

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Cite this

Simmonds, M. G., Gladfelter, W. L., Li, H., & McMurry, P. H. (1993). Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH₃) as a precursor. In Chemical Perspectives of Microelectronic Materials III (pp. 317-322). (Materials Research Society Symposium Proceedings; Vol. 282). Publ by Materials Research Society.

Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH₃) as a precursor. / Simmonds, Michael G.; Gladfelter, Wayne L.; Li, Haojiang et al.
Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society, 1993. p. 317-322 (Materials Research Society Symposium Proceedings; Vol. 282).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Simmonds, MG, Gladfelter, WL, Li, H & McMurry, PH 1993, Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH₃) as a precursor. in Chemical Perspectives of Microelectronic Materials III. Materials Research Society Symposium Proceedings, vol. 282, Publ by Materials Research Society, pp. 317-322, Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials, Boston, MA, USA, 11/30/92.

Simmonds, Michael G. ; Gladfelter, Wayne L. ; Li, Haojiang et al. / Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH₃) as a precursor. Chemical Perspectives of Microelectronic Materials III. Publ by Materials Research Society, 1993. pp. 317-322 (Materials Research Society Symposium Proceedings).

@inproceedings{9605a668ca744366a07829a928a56088,

title = "Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor",

abstract = "Particle formation in the gas phase during the chemical vapor deposition of Al using dimethylethylamine alane was studied. Typical sizes of the crystalline Al particles monitored were in the range 20 nm to 1000 nm. Introducing trace amounts of H2O, CO and O2 into the reactor during the flow of the precursor caused an increase in the number of particles. Our results suggested that Al particle formation was induced by impurities in the gas phase although competing mechanisms could not be ruled out.",

author = "Simmonds, {Michael G.} and Gladfelter, {Wayne L.} and Haojiang Li and McMurry, {Peter H.}",

year = "1993",

month = jan,

day = "1",

language = "English (US)",

isbn = "1558991778",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "317--322",

booktitle = "Chemical Perspectives of Microelectronic Materials III",

note = "Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials ; Conference date: 30-11-1992 Through 03-12-1992",

}

TY - GEN

T1 - Aluminum particle formation in the gas phase of a low pressure chemical vapor deposition reactor using dimethylethylamine alane (AlH3) as a precursor

AU - Simmonds, Michael G.

AU - Gladfelter, Wayne L.

AU - Li, Haojiang

AU - McMurry, Peter H.

PY - 1993/1/1

Y1 - 1993/1/1

N2 - Particle formation in the gas phase during the chemical vapor deposition of Al using dimethylethylamine alane was studied. Typical sizes of the crystalline Al particles monitored were in the range 20 nm to 1000 nm. Introducing trace amounts of H2O, CO and O2 into the reactor during the flow of the precursor caused an increase in the number of particles. Our results suggested that Al particle formation was induced by impurities in the gas phase although competing mechanisms could not be ruled out.

AB - Particle formation in the gas phase during the chemical vapor deposition of Al using dimethylethylamine alane was studied. Typical sizes of the crystalline Al particles monitored were in the range 20 nm to 1000 nm. Introducing trace amounts of H2O, CO and O2 into the reactor during the flow of the precursor caused an increase in the number of particles. Our results suggested that Al particle formation was induced by impurities in the gas phase although competing mechanisms could not be ruled out.

UR - http://www.scopus.com/inward/record.url?scp=0027226429&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027226429&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027226429

SN - 1558991778

T3 - Materials Research Society Symposium Proceedings

SP - 317

EP - 322

BT - Chemical Perspectives of Microelectronic Materials III

PB - Publ by Materials Research Society

T2 - Proceedings of the 3rd Biennial Meeting of Chemical Perspectives of Microelectronic Materials

Y2 - 30 November 1992 through 3 December 1992

ER -