Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance

Nazila Haratipour; Steven J. Koester

doi:10.1109/LED.2015.2499209

Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance

Nazila Haratipour, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO₂ gate dielectric. Before passivation, devices with 0.3-μm gate length behaved as p-MOSFETs with peak extrinsic transconductance, g_m, of 282 μS/μm at V_DS=-2 V. After passivation, the same devices displayed the ambipolar behavior, and when tested as n-MOSFETs, had peak g_m =66 μS/μm at V_DS = +2 V, and similar devices on the same wafer had g_m as high as 80 μS/μm. These results are an important step toward the realization of high-performance black phosphorus complementary logic circuits.

Original language	English (US)
Article number	7323815
Pages (from-to)	103-106
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	37
Issue number	1
DOIs	https://doi.org/10.1109/LED.2015.2499209
State	Published - Jan 2016

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Publisher Copyright:
© 2015 IEEE.

Keywords

Dielectrics
Logic gates
MOSFET
MOSFET circuits
Passivation
Phosphorus
Transconductance

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abstract = "Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-μm gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 μS/μm at VDS=-2 V. After passivation, the same devices displayed the ambipolar behavior, and when tested as n-MOSFETs, had peak gm =66 μS/μm at VDS = +2 V, and similar devices on the same wafer had gm as high as 80 μS/μm. These results are an important step toward the realization of high-performance black phosphorus complementary logic circuits.",

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Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance

Abstract

Bibliographical note

Keywords

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MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

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Ambipolar Black Phosphorus MOSFETs with Record n-Channel Transconductance

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

Access

OpenUrl availability

Other files and links

Fingerprint

Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

Cite this