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Ambipolar black phosphorus MOSFETs with record n-channel extrinsic transconductance are reported. The devices consist of multilayer black phosphorus aligned to a local back-gate electrode with 10-nm-thick HfO2 gate dielectric. Before passivation, devices with 0.3-μm gate length behaved as p-MOSFETs with peak extrinsic transconductance, gm, of 282 μS/μm at VDS=-2 V. After passivation, the same devices displayed the ambipolar behavior, and when tested as n-MOSFETs, had peak gm =66 μS/μm at VDS = +2 V, and similar devices on the same wafer had gm as high as 80 μS/μm. These results are an important step toward the realization of high-performance black phosphorus complementary logic circuits.
Bibliographical notePublisher Copyright:
© 2015 IEEE.
Copyright 2017 Elsevier B.V., All rights reserved.
- Logic gates
- MOSFET circuits
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Reporting period for MRSEC
- Period 2