Abstract
Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry. The gate electric field produces a significant ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the coupling of localized charge to strain. Within a mixed phase scenario, the gate effect and magnetoresistance are interpreted in the framework of a "general susceptibility," which describes how phase boundaries move through a hierarchical pinning landscape.
Original language | English (US) |
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Article number | 037204 |
Journal | Physical review letters |
Volume | 94 |
Issue number | 3 |
DOIs | |
State | Published - Jan 28 2005 |