Ambipolar gate effect and low temperature magnetoresistance of ultrathin La0.8Ca0.2MnO3 films

M. Eblen-Zayas, A. Bhattacharya, N. E. Staley, A. L. Kobrinskii, A. M. Goldman

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Abstract

Ultrathin La0.8Ca0.2MnO3 films have been measured in a field-effect geometry. The gate electric field produces a significant ambipolar decrease in resistance at low temperatures. This is attributed to the development of a pseudogap in the density of states and the coupling of localized charge to strain. Within a mixed phase scenario, the gate effect and magnetoresistance are interpreted in the framework of a "general susceptibility," which describes how phase boundaries move through a hierarchical pinning landscape.

Original languageEnglish (US)
Article number037204
JournalPhysical review letters
Volume94
Issue number3
DOIs
StatePublished - Jan 28 2005

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