An oil-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

Chris H. Kim, Kaushik Roy, Steven Hsu, Ram K. Krishnamurthy, Shekhar Borkar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

27 Scopus citations

Abstract

This paper describes an on-die leakage current sensor in 1.2V, 90nm CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs, while the proposed sensor only requires a single bias generator even for multi-bit resolution sensing. A 6-channel leakage current monitor testchip fabricated in 90nm dual-Vt CMOS is also described.

Original languageEnglish (US)
Title of host publication2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI
Pages250-251
Number of pages2
EditionCIRCUITS SYMP.
StatePublished - Sep 29 2004
Event2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI - Honolulu, HI, United States
Duration: Jun 17 2004Jun 19 2004

Other

Other2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI
CountryUnited States
CityHonolulu, HI
Period6/17/046/19/04

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