An oil-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

Chris H. Kim; Kaushik Roy; Steven Hsu; Ram K. Krishnamurthy; Shekhar Borkar

An oil-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

Chris H. Kim, Kaushik Roy, Steven Hsu, Ram K. Krishnamurthy, Shekhar Borkar

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

28 Scopus citations

Abstract

This paper describes an on-die leakage current sensor in 1.2V, 90nm CMOS technology for accurately measuring process variation. Results based on measured leakage data show (i) higher signal-to-noise ratio and (ii) reduced sensitivity to supply and P/N skew variations compared to prior designs, while the proposed sensor only requires a single bias generator even for multi-bit resolution sensing. A 6-channel leakage current monitor testchip fabricated in 90nm dual-Vt CMOS is also described.

Original language	English (US)
Title of host publication	2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI
Pages	250-251
Number of pages	2
Edition	CIRCUITS SYMP.
State	Published - Sep 29 2004
Event	2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI - Honolulu, HI, United States Duration: Jun 17 2004 → Jun 19 2004

Other

Other	2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI
Country/Territory	United States
City	Honolulu, HI
Period	6/17/04 → 6/19/04

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Kim, CH, Roy, K, Hsu, S, Krishnamurthy, RK & Borkar, S 2004, An oil-die CMOS leakage current sensor for measuring process variation in sub-90nm generations. in 2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI. CIRCUITS SYMP. edn, pp. 250-251, 2004 Symposium on VLSI Circuits, Digest of Technical Papers, 2004 VLSI, Honolulu, HI, United States, 6/17/04.

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An oil-die CMOS leakage current sensor for measuring process variation in sub-90nm generations

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