Analysis of interrupted growth strategies for cadmium telluride in an unseeded vertical Bridgman system

Satheesh Kuppurao, Simon Brandon, Jeffrey J. Derby

Research output: Contribution to journalArticlepeer-review

46 Scopus citations

Abstract

A transient, non-dilute finite element model is employed to study a novel, interrupted growth strategy which has been employed for the unseeded, vertical Bridgman growth of cadmium telluride. Computations clearly show the time-dependent translation strategy causes solute diffusion layers in the melt to successively grow and die in time, thus providing a means to mix the cadmium rejected at the growth interface into the bulk. This strategy stabilizes the solid-liquid interface by delaying the onset of constitutional supercooling, thus allowing the use of growth rates for grain selection which are higher than would be possible using continuous translation.

Original languageEnglish (US)
Pages (from-to)459-470
Number of pages12
JournalJournal of Crystal Growth
Volume158
Issue number4
DOIs
StatePublished - Feb 1996

Bibliographical note

Funding Information:
This work was supported in part by Johnson Matthey Electronics, Inc., under contract MDA972-91-C-0046, IR Materials Producibility, from the Advanced Research Projects Agency, Microelectronics Technology Office, and by the National Science Foundation under grant number DMR-9058386. Computational resources were provided by the Minnesota Supercomputer Institute and the Army High Performance Computing Research Center under the auspices of the Department of the Army, Army Research Laboratory cooperative agreement number DAAH04-95-2-0003/contract number DAAH04-95-C-0008. The content does not necessarily reflect the position or the policy of the government, and no official endorsement should be inferred. S.B. acknowledges support by The Fund for the Promotion of Research at the Technion and by The Center for Absorption in Science, Ministry of Immigrant Absorption, State of Israel. S.K. gratefully acknowledges the hospitality of S.B. and the faculty and staff of Technion.

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