Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Sang Hyun Oh; Don Monroe; J. M. Hergenrother

doi:10.1109/55.863106

Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

Sang Hyun Oh, Don Monroe, J. M. Hergenrother

Electrical and Computer Engineering

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208 Scopus citations

Abstract

Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length λ, over which the source and drain perturb the channel potential, is 1/π of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.

Original language	English (US)
Pages (from-to)	445-447
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	21
Issue number	9
DOIs	https://doi.org/10.1109/55.863106
State	Published - Sep 2000

Keywords

Double-gate MOSFET
MOSFET scaling
short-channel effect
surrounding-gate MOSFET

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title = "Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs",

abstract = "Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length λ, over which the source and drain perturb the channel potential, is 1/π of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.",

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AU - Oh, Sang Hyun

AU - Monroe, Don

AU - Hergenrother, J. M.

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N2 - Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length λ, over which the source and drain perturb the channel potential, is 1/π of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.

AB - Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the electrostatic potential as confined by the gates, and thus by the device dimensions. The simple but powerful evanescent-mode analysis shows that the length λ, over which the source and drain perturb the channel potential, is 1/π of the effective device thickness in the double-gate case, and 1/4.810 of the effective diameter in the cylindrical case, in excellent agreement with PADRE device simulations. Thus for equivalent silicon and gate oxide thicknesses, evanescent-mode analysis indicates that Cyl-MOSFETs can be scaled to 35% shorter channel lengths than DG-MOSFETs.

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Analytic description of short-channel effects in fully-depleted double-gate and cylindrical, surrounding-gate MOSFETs

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