Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide films

Daniel G. Colombo; David C. Gilmer; Victor G. Young; Stephen A. Campbell; Wayne L. Gladfelter

Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide films

Daniel G. Colombo, David C. Gilmer, Victor G. Young, Stephen A. Campbell, Wayne L. Gladfelter

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Abstract

Anhydrous metal nitrates exhibit the volatility and reactivity necessary for chemical vapor deposition (CVD) applications. With the obvious absence of any carbon and hydrogen, and the presence of an intrinsic oxidant in the form of the nitrate ligand, anhydrous metal nitrates represent a useful class of single-source precursors for the CVD of metal oxide films.

Original language	English (US)
Pages (from-to)	220-222
Number of pages	3
Journal	Advanced Materials
Volume	10
Issue number	17
State	Published - Dec 1 1998

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title = "Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide films",

abstract = "Anhydrous metal nitrates exhibit the volatility and reactivity necessary for chemical vapor deposition (CVD) applications. With the obvious absence of any carbon and hydrogen, and the presence of an intrinsic oxidant in the form of the nitrate ligand, anhydrous metal nitrates represent a useful class of single-source precursors for the CVD of metal oxide films.",

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AU - Colombo, Daniel G.

AU - Gilmer, David C.

AU - Young, Victor G.

AU - Campbell, Stephen A.

AU - Gladfelter, Wayne L.

PY - 1998/12/1

Y1 - 1998/12/1

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AB - Anhydrous metal nitrates exhibit the volatility and reactivity necessary for chemical vapor deposition (CVD) applications. With the obvious absence of any carbon and hydrogen, and the presence of an intrinsic oxidant in the form of the nitrate ligand, anhydrous metal nitrates represent a useful class of single-source precursors for the CVD of metal oxide films.

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Anhydrous metal nitrates as volatile single source precursors for the CVD of metal oxide films

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