Abstract
The application of large-scale numerical simulation to the design and control of systems for growth of semiconductor materials from the melt is demonstrated by analysis of Czochralski (CZ) growth of silicon and Liquid-Encapsulated-Czochralski (LEC) growth of GaAs. The Thermal-Capillary model used for analysis of these systems includes the interactions between heat transfer and capillarity in setting the shapes of the growing crystal, the melt/solid interface and the melt/ambient meniscus. Calculations are based on a robust finite element algorithm that uses Newton's method to solve simultaneously for the moving interfaces and the field variables.
Original language | English (US) |
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Title of host publication | Unknown Host Publication Title |
Editors | S.K. Samanta, R. Komanduri, R. McMeeking, M.M. Chen, A. Tseng |
Publisher | ASME |
Pages | 331-348 |
Number of pages | 18 |
State | Published - Dec 1 1987 |