Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila; A. W. Peters; Zhanyong Li; M. A. Ortuño; A. B.F. Martinson; C. J. Cramer; J. T. Hupp; O. K. Farha

doi:10.1039/c6dt02572b

Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila, A. W. Peters, Zhanyong Li, M. A. Ortuño, A. B.F. Martinson, C. J. Cramer, J. T. Hupp, O. K. Farha

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Abstract

To grow films of Cu₂O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

Original language	English (US)
Pages (from-to)	5790-5795
Number of pages	6
Journal	Dalton Transactions
Volume	46
Issue number	18
DOIs	https://doi.org/10.1039/c6dt02572b
State	Published - Jan 1 2017

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title = "Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water",

abstract = "To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 {\AA} per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).",

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doi = "10.1039/c6dt02572b",

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T1 - Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

AU - Avila, J. R.

AU - Peters, A. W.

AU - Li, Zhanyong

AU - Ortuño, M. A.

AU - Martinson, A. B.F.

AU - Cramer, C. J.

AU - Hupp, J. T.

AU - Farha, O. K.

PY - 2017/1/1

Y1 - 2017/1/1

N2 - To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

AB - To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

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Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

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Energy Frontier Research Center For Inorganometallic Catalyst Design (DE-SC0012702)

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Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

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Energy Frontier Research Center For Inorganometallic Catalyst Design (DE-SC0012702)

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